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IPP-1104

OUTLINE 2 WAY

IPP

Innovative Power Products, Inc.

IRF1104

PowerMOSFET(Vdss=40V,Rds(on)=0.009ohm,Id=100A??

VDSS=40V RDS(on)=0.009? ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRF1104

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1104L

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.009? ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRF1104LPBF

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.009? ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF1104PBF

HEXFETPOWERMOSFET(VDSS=40V,RDS(on)=0.009廓,ID=100A)

VDSS=40V RDS(on)=0.009? ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRF1104PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1104S

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.009? ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRF1104SPBF

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.009? ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRL1104

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104L

Logic-LevelGateDrive

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104LPBF

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104PBF

Logic-LevelGateDrive

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104S

AdvancedProcessTechnologyLogic-LevelGateDrive

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104S

Logic-LevelGateDrive

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104SPBF

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IS1104

SwitchingModePowerSupply

ISOCOM

ISOCOM COMPONENTS

ISF1104

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=110mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISP1104

AdvancedUniversalSerialBustransceiver

Generaldescription TheISP1104UniversalSerialBus(USB)transceiveriscompliantwiththeUniversalSerialBusSpecificationRev.2.0.TheISP1104cantransmitandreceiveUSBdataatfull-speed(12Mbit/s).ItallowssingleanddifferentialinputmodesselectablebyaMODEinput. Features ■

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

ISP1104W

AdvancedUniversalSerialBustransceiver

Generaldescription TheISP1104UniversalSerialBus(USB)transceiveriscompliantwiththeUniversalSerialBusSpecificationRev.2.0.TheISP1104cantransmitandreceiveUSBdataatfull-speed(12Mbit/s).ItallowssingleanddifferentialinputmodesselectablebyaMODEinput. Features ■

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IPP
489
詢價(jià)
INFINEON/英飛凌
23+
TO-TO-220
12300
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
Infineon/英飛凌
23+
20000
全新、原裝、現(xiàn)貨
 詢價(jià)
INFINEON/英飛凌
21+
TO-220
10000
公司原裝現(xiàn)貨,歡迎咨詢
 詢價(jià)
INFINEON/英飛凌
22+
TO-220
20000
原裝現(xiàn)貨,實(shí)單支持
 詢價(jià)
ADI
23+
TO-220
8000
只做原裝現(xiàn)貨
 詢價(jià)
ADI
23+
TO-220
7000
詢價(jià)
INFINEON
24+
TO-TO-220
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價(jià)
INFINEON
24+
TO220-3
8866
詢價(jià)
INF
23+
TO-220AB
5000
原裝正品,假一罰十
 詢價(jià)
更多IPP-1104供應(yīng)商 更新時(shí)間2024-10-28 10:03:00

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