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IRF1104L

HEXFET Power MOSFET

VDSS=40V RDS(on)=0.009? ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRF1104L

40V 單個(gè) N 通道 HEXFET Power MOSFET, 采用 TO-262 封裝; \n優(yōu)勢(shì):\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進(jìn)的品質(zhì)\n? 動(dòng)態(tài)的dv/dt額定值\n? 快速開(kāi)關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度\n;

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF1104LPBF

HEXFET Power MOSFET

VDSS=40V RDS(on)=0.009? ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF1104PBF

HEXFETPOWERMOSFET(VDSS=40V,RDS(on)=0.009廓,ID=100A)

VDSS=40V RDS(on)=0.009? ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRF1104PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1104S

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.009? ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRF1104SPBF

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.009? ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRL1104

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104L

Logic-LevelGateDrive

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104LPBF

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

技術(shù)參數(shù)

  • VDS?max：

    40.0V

  • RDS (on)?max：

    9.0m?

  • RDS (on)(@10V)?max：

    9.0m?

  • Polarity?：

    N

  • ID (@ TC=100°C)?max：

    71.0A

  • ID ?max：

    71.0A

  • ID (@ TC=25°C)?max：

    100.0A

  • Ptot?max：

    170.0W

  • QG?：

    62.0nC?

  • Mounting?：

    THT

  • Qgd?：

    10.0nC?

  • RthJC?max：

    0.9K/W

  • Tj?max：

    175.0°C

  • VGS?max：

    20.0V

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO-262
501141
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢(xún)價(jià)
IR
24+
TO-262
8866
詢(xún)價(jià)
IR
2015+
TO-262
12500
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng)
 詢(xún)價(jià)
IR
23+
TO-262
35890
詢(xún)價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠(chǎng)免費(fèi)送樣
 詢(xún)價(jià)
IR
23+
TO-262-3
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢(xún)價(jià)
INFINE0N
21+
I2PAK (TO-262)
32568
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
 詢(xún)價(jià)
INFINEON
1503+
TO-262
3000
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢(xún)價(jià)
Infineon
22+
NA
2118
加我QQ或微信咨詢(xún)更多詳細(xì)信息,
 詢(xún)價(jià)
Infineon Technologies
22+
TO2623 Long Leads I2Pak TO262A
9000
原廠(chǎng)渠道,現(xiàn)貨配單
 詢(xún)價(jià)
更多IRF1104L供應(yīng)商 更新時(shí)間2025-7-29 16:40:00

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