首頁 >IPD068N10N3>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IPD068N10N3 | N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
Marking:068N10N;Package:TO-252;100V N-Channel MOSFET Features ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Idealforhigh-frequencyswitchingandsynchronousrectification ?(VGS=10V) ?VDS(V)=100V ?ID=90A ?RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司 | UMW | ||
OptiMOS3 Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-channel, normal level | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-channel, normal level | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
詳細(xì)參數(shù)
- 型號:
IPD068N10N3
- 功能描述:
MOSFET N-Channel MOSFET 20-200V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
24+ |
標(biāo)準(zhǔn)封裝 |
15798 |
原廠渠道供應(yīng),大量現(xiàn)貨,原型號開票。 |
詢價(jià) | ||
INFINEON |
2014+ |
TO-252 |
3219 |
詢價(jià) | |||
Infineon(英飛凌) |
23+ |
N/A |
12000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
INFINEON |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
Infineon(英飛凌) |
23+ |
25900 |
新到現(xiàn)貨,只有原裝 |
詢價(jià) | |||
NA |
23+ |
NA |
26094 |
10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品,做服務(wù)型企業(yè) |
詢價(jià) | ||
Infineon/英飛凌 |
22+ |
TO252-3 |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
Infineon/英飛凌 |
23+ |
TO252-3 |
6000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
Infineon(英飛凌) |
22+ |
NA |
7000 |
原廠原裝現(xiàn)貨 |
詢價(jià) | ||
Infineon(英飛凌) |
23+ |
標(biāo)準(zhǔn)封裝 |
7000 |
原廠原裝現(xiàn)貨訂貨價(jià)格優(yōu)勢終端BOM表可配單提供樣品 |
詢價(jià) |
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