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IXFH50N60X

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFH50N60X

PreliminaryTechnicalInformation

IXYS

IXYS Corporation

IXFQ50N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=180mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFQ50N60X

PreliminaryTechnicalInformation

IXYS

IXYS Corporation

IXFQ50N60X

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFT50N60X

PreliminaryTechnicalInformation

IXYS

IXYS Corporation

IXGH50N60A

HiPerFASTIGBT-SurfaceMountable

SurfaceMountable Features InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD HighfrequencyIGBT Highcurrenthandlingcapability 2ndgenerationHDMOS?process MOSGateturn-on -drivesimplicity

IXYS

IXYS Corporation

IXGH50N60AS

HiPerFASTIGBT-SurfaceMountable

SurfaceMountable Features InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD HighfrequencyIGBT Highcurrenthandlingcapability 2ndgenerationHDMOS?process MOSGateturn-on -drivesimplicity

IXYS

IXYS Corporation

IXGH50N60B

HiPerFASTIGBT

Features ?Internationalstandardpackages ?HighfrequencyIGBT ?LatestgenerationHDMOSTMprocess ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersuppli

IXYS

IXYS Corporation

IXGJ50N60B

HiPerFASTIGBT

Features ?Internationalstandardpackages ?HighfrequencyIGBT ?LatestgenerationHDMOSTMprocess ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersuppli

IXYS

IXYS Corporation

IXGK50N60B

HiPerFASTIGBT

Features ?Internationalstandardpackages ?HighfrequencyIGBT ?LatestgenerationHDMOSTMprocess ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersuppli

IXYS

IXYS Corporation

IXGN50N60B

HiPerFASTTMIGBT

Features ?InternationalstandardpackageSOT-227B ?Aluminiumnitrideisolation -highpowerdissipation ?Isolationvoltage3000V~ ?Veryhighcurrent,fastswitchingIGBT ?LowVCE(sat)forminimumon-stateconductionlosses ?MOSGateturn-ondrivesimplicity ?Lowcollector-to-cas

IXYS

IXYS Corporation

IXGR50N60B

HiPerFASTIGBTISOPLUS247

Features ?DCBIsolatedmountingtab ?MeetsTO-247ADpackageOutline ?Highcurrenthandlingcapability ?LatestgenerationHDMOSTMprocess ?MOSGateturn-on-drivesimplicity Applications ?Uninterruptiblepowersupplies(UPS) ?Switched-modeandresonant-modepowersupplies ?ACmoto

IXYS

IXYS Corporation

IXGT50N60B

HiPerFASTIGBT

Features ?Internationalstandardpackages ?HighfrequencyIGBT ?LatestgenerationHDMOSTMprocess ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersuppli

IXYS

IXYS Corporation

IXRH50N60

IGBTwithReverseBlockingcapability

Features ●IGBTwithNPT(nonpunchthrough)structure ●reverseblockingcapabilityindependentfromgatevoltage -functionofseriesdiodemonolithicallyintegrated -noexternalseriesdioderequired -softreverserecovery ●positivetemperaturecoefficientofsaturationvolta

IXYS

IXYS Corporation

IXSH50N60B

ShortCircuitSOACapability

IGBTHighSpeed ShortCircuitSOACapability Features ?Internationalstandardpackage JEDECTO-247AD,andTO-247SMDforsurfacemount ?GuaranteedShortCircuitSOAcapability ?HighfrequencyIGBT ?LatestgenerationHDMOSTMprocess ?LowVCE(sat) -forminimumon-stateconducti

IXYS

IXYS Corporation

KGF50N60KDA

KECFieldStopTrenchIGBTsofferlowswitchinglosses,highenergyefficiencyandshortcircuitruggedness.

KECKEC CORPORATION

KEC株式會(huì)社

KGT50N60KDA

Highspeedswitching

KECKEC CORPORATION

KEC株式會(huì)社

NGTB50N60FLWG

InsulatedGateBipolarTransistor(IGBT)

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NGTB50N60FWG

InsulatedGateBipolarTransistor(IGBT)

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    IKW50N60TAXK

  • 制造商:

    Infineon Technologies AG

  • 功能描述:

    IGBT PRODUCTS - Rail/Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON
23+
8000
只做原裝現(xiàn)貨
詢價(jià)
INFINEON
23+
7000
詢價(jià)
INFINEON/英飛凌
23+
TO247
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
INFINEON/英飛凌
2022
TO247
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
INFINEON/英飛凌
2122+
NA
15688
全新原裝正品現(xiàn)貨,優(yōu)勢(shì)渠道可含稅,假一賠十
詢價(jià)
INFINEON/英飛凌
23+
TO-247
98500
原裝正品,支持實(shí)單
詢價(jià)
INFINEON/英飛凌
22+
289600
絕對(duì)原裝正品現(xiàn)貨,假一賠十
詢價(jià)
INFINEON/英飛凌
21+
TO-247
17637
絕對(duì)原裝正品現(xiàn)貨,假一罰十
詢價(jià)
INFINEON/英飛凌
21+
TO-247
17637
原裝現(xiàn)貨,假一罰十
詢價(jià)
INFINEON
22+
TO-247
10000
詢價(jià)
更多IKW50N60TAXK供應(yīng)商 更新時(shí)間2024-11-2 15:00:00