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IKW50N60T

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKW50N60T

Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKW50N60T

IGBT in TRENCHSTOP??and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKW50N60TA

Designed for DC/AC converters for Automotive Application

Features: AutomotiveAECQ101qualified DesignedforDC/ACconvertersforAutomotiveApplication VerylowVCE(sat)1.5V(typ.) MaximumJunctionTemperature175°C Shortcircuitwithstandtime5μs TRENCHSTOPTMandFieldstoptechnologyfor600V applicationsoffers: ?-ve

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKW50N60T_08

Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKW50N60T_13

IGBT in TRENCHSTOP??and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKW50N60TAFKSA1

包裝：管件 封裝/外殼：TO-247-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT TRENCH/FS 600V 80A TO247-3

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKW50N60TFKSA1

包裝：管件 封裝/外殼：TO-247-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT TRENCH/FS 600V 80A TO247-3

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IXFH50N60X

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH50N60X

PreliminaryTechnicalInformation

IXYS

IXYS Corporation

IXFQ50N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=180mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFQ50N60X

PreliminaryTechnicalInformation

IXYS

IXYS Corporation

IXFQ50N60X

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFT50N60X

PreliminaryTechnicalInformation

IXYS

IXYS Corporation

IXGH50N60A

HiPerFASTIGBT-SurfaceMountable

SurfaceMountable Features InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD HighfrequencyIGBT Highcurrenthandlingcapability 2ndgenerationHDMOS?process MOSGateturn-on -drivesimplicity

IXYS

IXYS Corporation

IXGH50N60AS

HiPerFASTIGBT-SurfaceMountable

SurfaceMountable Features InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD HighfrequencyIGBT Highcurrenthandlingcapability 2ndgenerationHDMOS?process MOSGateturn-on -drivesimplicity

IXYS

IXYS Corporation

IXGH50N60B

HiPerFASTIGBT

Features ?Internationalstandardpackages ?HighfrequencyIGBT ?LatestgenerationHDMOSTMprocess ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersuppli

IXYS

IXYS Corporation

IXGJ50N60B

HiPerFASTIGBT

Features ?Internationalstandardpackages ?HighfrequencyIGBT ?LatestgenerationHDMOSTMprocess ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersuppli

IXYS

IXYS Corporation

IXGK50N60B

HiPerFASTIGBT

Features ?Internationalstandardpackages ?HighfrequencyIGBT ?LatestgenerationHDMOSTMprocess ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersuppli

IXYS

IXYS Corporation

IXGN50N60B

HiPerFASTTMIGBT

Features ?InternationalstandardpackageSOT-227B ?Aluminiumnitrideisolation -highpowerdissipation ?Isolationvoltage3000V~ ?Veryhighcurrent,fastswitchingIGBT ?LowVCE(sat)forminimumon-stateconductionlosses ?MOSGateturn-ondrivesimplicity ?Lowcollector-to-cas

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    IKW50N60T

  • 功能描述：

    IGBT 晶體管 LOW LOSS DuoPack 600V 50A

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
22+
TO-247
5000
原裝現(xiàn)貨支持實單假一罰百
 詢價
INFINEON
21+
SMD
5236
十年信譽,只做原裝,有掛就有現(xiàn)貨!
 詢價
INFINEON
14
TO-247
36000
自己庫存,原裝正品假一賠百0755-27210160田生
 詢價
INFINEON
23+
TO-247
8000
原裝正品,假一罰十
 詢價
INFINEON
1410+ROHS全新原裝
TO-247
12890
原裝現(xiàn)貨在線咨詢樣品※技術(shù)支持專業(yè)電子元器件授權(quán)
 詢價
INFINEON
1418+
TO-247
6000
原裝正品現(xiàn)貨
 詢價
INFINEON
24+
TO-247
10000
英飛凌代理渠道,只做原裝QQ:2369405325
 詢價
INFINEON/英飛凌
2021+
TO-247
18044
原裝進(jìn)口假一罰十
 詢價
INFINEON/英飛凌
20+
TO-247
300
進(jìn)口原裝支持含稅
 詢價
INFINEON
21+
TO-247
4800
全新原裝公司現(xiàn)貨
詢價
更多IKW50N60T供應(yīng)商 更新時間2024-12-28 14:50:00

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