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IKW20N60TA

Designed for DC/AC converters for Automotive Application

LowLossDuoPack:IGBTinTrenchStop?andFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode ?AutomotiveAECQ101qualified ?DesignedforDC/ACconvertersforAutomotiveApplication ?VerylowVCE(sat)1.5V(typ.) ?MaximumJunctionTemperature175°C

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKW20N60TAFKSA1

包裝：管件 封裝/外殼：TO-247-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 40A 166W TO247-3

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISPP20N60CFD

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.22? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISPW20N60CFD

iscN-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤220m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXDP20N60B

HighVoltageIGBTwithoptionalDiode

VCES=600V IC25=32A VCE(sat)typ=2.2V Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultr

IXYS

IXYS Corporation

IXFH20N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH20N60

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH20N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH20N60Q

HiPerFETPowerMOSFETsQ-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowGateChargeandCapacitances Features ?IXYSadvancedlowgatechargeprocess ?Internationalstandardpackages ?Lowgatechargeandcapacitance -easiertodrive -fasterswitching ?LowRDS

IXYS

IXYS Corporation

IXFH20N60Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFM20N60

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM20N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM20N60

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFT20N60Q

HiPerFETPowerMOSFETsQ-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowGateChargeandCapacitances Features ?IXYSadvancedlowgatechargeprocess ?Internationalstandardpackages ?Lowgatechargeandcapacitance -easiertodrive -fasterswitching ?LowRDS

IXYS

IXYS Corporation

IXGA20N60B

HiPerFASTTMIGBT

IXYS

IXYS Corporation

IXGH20N60

LowVCE(sat)IGBT,HighspeedIGBT

LowVCE(sat)IGBTHighspeedIGBT Features lInternationalstandardpackages l2ndgenerationHDMOSTMprocess lLowVCE(sat) -forlowon-stateconductionlosses lHighcurrenthandlingcapability lMOSGateturn-on -drivesimplicity lVoltageratingguaranteedat

IXYS

IXYS Corporation

IXGH20N60A

LowVCE(sat)IGBT,HighspeedIGBT

LowVCE(sat)IGBTHighspeedIGBT Features lInternationalstandardpackages l2ndgenerationHDMOSTMprocess lLowVCE(sat) -forlowon-stateconductionlosses lHighcurrenthandlingcapability lMOSGateturn-on -drivesimplicity lVoltageratingguaranteedat

IXYS

IXYS Corporation

IXGH20N60B

HiPerFASTIGBT

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features ?InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD ?Highcurrenthandlingcapability ?LatestgenerationHDMOSTMprocess ?MOSGateturn-on -drivesimplicity

IXYS

IXYS Corporation

IXGM20N60

LowVCE(sat)IGBT,HighspeedIGBT

LowVCE(sat)IGBTHighspeedIGBT Features lInternationalstandardpackages l2ndgenerationHDMOSTMprocess lLowVCE(sat) -forlowon-stateconductionlosses lHighcurrenthandlingcapability lMOSGateturn-on -drivesimplicity lVoltageratingguaranteedat

IXYS

IXYS Corporation

IXGM20N60A

LowVCE(sat)IGBT,HighspeedIGBT

LowVCE(sat)IGBTHighspeedIGBT Features lInternationalstandardpackages l2ndgenerationHDMOSTMprocess lLowVCE(sat) -forlowon-stateconductionlosses lHighcurrenthandlingcapability lMOSGateturn-on -drivesimplicity lVoltageratingguaranteedat

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    IKW20N60TA

  • 功能描述：

    IGBT 600V 40A 166W TO247-3

  • RoHS：

    是

  • 類別：

    分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路

  • 系列：

    TrenchStop™

  • 標(biāo)準(zhǔn)包裝：

    30

  • 系列：

    GenX3™ IGBT

  • 類型：

    PT 電壓 -

  • 集電極發(fā)射極擊穿（最大）：

    1200V Vge,

  • Ic時的最大Vce（開）：

    3V @ 15V，100A 電流 -

  • 集電極(Ic)（最大）：

    200A 功率 -

  • 最大：

    830W

  • 輸入類型：

    標(biāo)準(zhǔn)

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-247-3

  • 供應(yīng)商設(shè)備封裝：

    PLUS247?-3

  • 包裝：

    管件

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
23+
TO247-3
10000
公司只做原裝正品
 詢價
Infineon Technologies
23+
原裝
8000
只做原裝現(xiàn)貨
 詢價
INFINEON/英飛凌
24+
TO247
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
 詢價
Infineon Technologies
23+
原裝
7000
詢價
INFINEON/英飛凌
22+
TO247-3
90251
詢價
Infineon
24+
TO247-3
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價
Infineon
1931+
N/A
493
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價
INFINEON
1809+
TO247-3
375
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價
Infineon
22+
NA
493
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
Infineon Technologies
22+
TO2473
9000
原廠渠道,現(xiàn)貨配單
 詢價
更多IKW20N60TA供應(yīng)商 更新時間2024-11-2 14:30:00

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