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ICE35N60W

N-Channel Enhancement Mode MOSFET

MICROSS

Micross Components

ICE35N60W

N-Channel Enhancement Mode MOSFET

ICEMOS

Icemos Technology

ISPW35N60CFD

N-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤118m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXDH35N60B

IGBTwithoptionalDiode

HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard

IXYS

IXYS Corporation

IXDP35N60B

IGBTwithoptionalDiode

HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard

IXYS

IXYS Corporation

SIHB35N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHB35N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHB35N60EF

EFSeriesPowerMOSFETWithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF35N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF35N60E

ESeriesPowerMOSFET

FEATURES ?Aspecificonresistance(m?-cm2)reductionof 25 ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF35N60EF

EFSeriesPowerMOSFETWithFastBodyDiode

FEATURES ?Aspecificonresistance(mΩ-cm2)reductionof 25 ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG35N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG35N60E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHG35N60EF

EFSeriesPowerMOSFETWithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP35N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP35N60E

ESeriesPowerMOSFET

FEATURES ?Aspecificonresistance(mΩ-cm2)reduction of25 ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP35N60EF

EFSeriesPowerMOSFETWithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SPW35N60CFD

N-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤118m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPW35N60CFD

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW35N60CFD

CoolMOSPowerTransistor

Features ?Newrevolutionaryhighvoltagetechnology ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Periodicavalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
N/A
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
N/A
21+
TO-247
10000
原裝現(xiàn)貨假一罰十
詢價(jià)
N/A
2022
TO-247
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
INFINEON
23+
DIP-8
8000
只做原裝現(xiàn)貨
詢價(jià)
INFINEON
23+
DIP-8
7000
詢價(jià)
2023+
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
23+
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
ICS
24+
PLCC32
3629
原裝優(yōu)勢(shì)!房間現(xiàn)貨!歡迎來電!
詢價(jià)
ICE
23+
PLCC-36
155
專營高頻管模塊,全新原裝!
詢價(jià)
ICE
2016+
PLCC-36
6000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價(jià)
更多ICE35N60W供應(yīng)商 更新時(shí)間2025-1-8 11:00:00