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HM20N120AB

KEDA PT IGBTs offer lower losses and higher energy efficiency for application

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM20N120T

H&MNPTIGBTsofferlowerlossesandhigherenergy

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM20N120TB

KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IHW20N120R

HighSpeed2-Technology

?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IHW20N120R

ReverseConductingIGBTwithmonolithicbodydiode

Features: ?PowerfulmonolithicBodyDiodewithverylowforwardvoltage ?Bodydiodeclampsnegativevoltages ?TrenchandFieldstoptechnologyfor1200Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior ?NPTtechnologyoffers

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IXDA20N120AS

HighVoltageIGBT

HighVoltageIGBT ShortCircuitSOACapabilitySquareRBSOA Features ●NPTIGBTtechnology ●highswitchingspeed ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●Internationalstandardp

IXYS

IXYS Corporation

IXDH20N120

HighVoltageIGBTwithoptionalDiode

HighVoltageIGBTwithoptionalDiode ShortCircuitSOACapabilitySquareRBSOA Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientfor easyparalleling ●MOSinpu

IXYS

IXYS Corporation

IXER20N120

NPT3IGBTinISOPLUS247

IXYS

IXYS Corporation

IXFK20N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK20N120

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFK20N120P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Corporation

IXFK20N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.57Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFN20N120

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackage ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated

IXYS

IXYS Corporation

IXFN20N120P

PolarPowerMOSFETHiPerFET

Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackage ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?Fastrecoverydiode ?UnclampedInductive

IXYS

IXYS Corporation

IXFR20N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=630mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFR20N120P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Corporation

IXFX20N120

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFX20N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX20N120P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Corporation

IXGA20N120

IGBT

Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersupplies(UPS) ?Switch-modeand

IXYS

IXYS Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
H&M
23+
TO-3P
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
H
23+
TO-3P
10000
公司只做原裝正品
 詢價
H
TO-3P
22+
6000
十年配單,只做原裝
 詢價
H
23+
TO-3P
6000
原裝正品，支持實單
 詢價
HMSEMI
23+
TO-3P
6800
專注配單,只做原裝進口現(xiàn)貨
 詢價
HMSEMI
23+
TO-3P
6800
專注配單,只做原裝進口現(xiàn)貨
 詢價
H
24+
TO-3P
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
臺產(chǎn)
09+
TO-252
5000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
臺產(chǎn)
23+
原裝正品現(xiàn)貨
10000
TO-252
 詢價
HM
24+
COB
17760
大批量供應(yīng)優(yōu)勢庫存熱賣
 詢價
更多HM20N120AB供應(yīng)商 更新時間2025-1-12 11:09:00

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