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HGTP2N120BND

12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTP2N120BNDandHGT1S2N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-statecond

Intersil

Intersil Corporation

D2N120CD

20Arms

NI

National Instruments Inc.

D2N120CD

20Arms120,240Vrms

NIEC

Nihon Inter Electronics Corporation

D2N120CF

20Arms120,240Vrms

NIEC

Nihon Inter Electronics Corporation

D2N120CG

20Arms120,240Vrms

NIEC

Nihon Inter Electronics Corporation

D2N120DD

20Arms

NI

National Instruments Inc.

D2N120DD

20Arms120,240Vrms

NIEC

Nihon Inter Electronics Corporation

D2N120DF

20Arms120,240Vrms

NIEC

Nihon Inter Electronics Corporation

D2N120DG

20Arms120,240Vrms

NIEC

Nihon Inter Electronics Corporation

HGTD2N120BNS

12A,1200V,NPTSeriesN-ChannelIGBT

TheHGTP2N120BN,HGTD2N120BNS,andHGT1S2N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTD2N120CNS

13A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD2N120CNS,HGTP2N120CN,andHGT1S2N120CNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTD2N120CNS

13A,1200V,NPTSeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP2N120BN

12A,1200V,NPTSeriesN-ChannelIGBT

TheHGTP2N120BN,HGTD2N120BNS,andHGT1S2N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTP2N120CN

13A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD2N120CNS,HGTP2N120CN,andHGT1S2N120CNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTP2N120CN

13A,1200V,NPTSeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP2N120CND

13A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes

TheHGTP2N120CNDandHGT1S2N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-statecond

Intersil

Intersil Corporation

HGTP2N120CNS

13A,1200V,NPTSeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IXGY2N120

HighVoltageIGBT

IXYS

IXYS Corporation

WPGT-2N120

GasDischargeTubes

WPI

World Produts Inc.

詳細(xì)參數(shù)

  • 型號(hào):

    HGTP2N120BND

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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8866
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更多HGTP2N120BND供應(yīng)商 更新時(shí)間2024-12-27 15:02:00