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D2N120DD

20 Arms 120,240 Vrms

NIEC

Nihon Inter Electronics Corporation

D2N120DD

20Arms

NI

National Instruments Inc.

D2N120DF

20Arms120,240Vrms

NIEC

Nihon Inter Electronics Corporation

D2N120DG

20Arms120,240Vrms

NIEC

Nihon Inter Electronics Corporation

HGTD2N120BNS

12A,1200V,NPTSeriesN-ChannelIGBT

TheHGTP2N120BN,HGTD2N120BNS,andHGT1S2N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTD2N120CNS

13A,1200V,NPTSeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTD2N120CNS

13A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD2N120CNS,HGTP2N120CN,andHGT1S2N120CNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTP2N120BN

12A,1200V,NPTSeriesN-ChannelIGBT

TheHGTP2N120BN,HGTD2N120BNS,andHGT1S2N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTP2N120BND

12A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTP2N120BNDandHGT1S2N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-statecond

Intersil

Intersil Corporation

HGTP2N120CN

13A,1200V,NPTSeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP2N120CN

13A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD2N120CNS,HGTP2N120CN,andHGT1S2N120CNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTP2N120CND

13A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes

TheHGTP2N120CNDandHGT1S2N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-statecond

Intersil

Intersil Corporation

HGTP2N120CNS

13A,1200V,NPTSeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IXGY2N120

HighVoltageIGBT

IXYS

IXYS Corporation

WPGT-2N120

GasDischargeTubes

WPI

World Produts Inc.

詳細(xì)參數(shù)

  • 型號(hào):

    D2N120DD

  • 制造商:

    NIEC

  • 制造商全稱:

    Nihon Inter Electronics Corporation

  • 功能描述:

    20 Arms 120,240 Vrms

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AXICOM
6000
面議
19
DIP6
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AXICOM
23+
DIP6
65480
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AXICOM
22+23+
DIP8
38400
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
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1822+
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9852
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AXICOM
24+
DIP
35200
一級(jí)代理/放心采購
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AXICOM
2021+
DIP8
100500
一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
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AXICOM
22+
DIP18
9600
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AXICOM
23+
DIP8
7300
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AXICOM
23+
DIP8
7300
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TE/泰科
23+
10000
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更多D2N120DD供應(yīng)商 更新時(shí)間2024-12-27 15:27:00