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首頁(yè)>HGTP12N60C3D>芯片詳情
HGTP12N60C3D 分立半導(dǎo)體產(chǎn)品晶體管 - UGBT、MOSFET - 單 ONSEMI/安森美半導(dǎo)體
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原廠料號(hào):HGTP12N60C3D品牌:ONSEMI
原裝現(xiàn)貨,實(shí)單價(jià)格可談
HGTP12N60C3D是分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單。制造商ONSEMI/onsemi生產(chǎn)封裝N/A/TO-220-3的HGTP12N60C3D晶體管 - UGBT、MOSFET - 單單 IGBT(絕緣柵雙極晶體管)是一種具有三個(gè)端子的多層半導(dǎo)體器件,能夠處理大電流,具有快速開關(guān)特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開關(guān)能量和柵極電荷。
產(chǎn)品屬性
更多- 類型
描述
- 產(chǎn)品編號(hào):
HGTP12N60C3D
- 制造商:
onsemi
- 類別:
- 包裝:
管件
- 不同?Vge、Ic 時(shí)?Vce(on)(最大值):
2.2V @ 15V,15A
- 開關(guān)能量:
380μJ(開),900μJ(關(guān))
- 輸入類型:
標(biāo)準(zhǔn)
- 工作溫度:
-40°C ~ 150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3
- 供應(yīng)商器件封裝:
TO-220-3
- 描述:
IGBT 600V 24A TO220-3
供應(yīng)商
- 企業(yè):
深圳良洲科技有限公司
- 商鋪:
- 聯(lián)系人:
楊夢(mèng)琪
- 手機(jī):
19128244554
- 詢價(jià):
- 電話:
0755-21010605
- 地址:
深圳市福田區(qū)華強(qiáng)北街道華航社區(qū)華強(qiáng)北路1005、1007、1015號(hào)華強(qiáng)電子世界2號(hào)樓2層22C081
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