GS-065-030-2-L中文資料GAN數(shù)據(jù)手冊(cè)PDF規(guī)格書

Features

? 650 V enhancement mode power transistor

? 850 V transient drain-to-source voltage

? Bottom-cooled, 8x8 mm PDFN package

? RDS(on) = 50 mΩ

? IDS,max = 30 A / IDSmax,Pulse = 60 A

? Simple gate drive requirements (0 V to 6 V)

? Transient tolerant gate drive (-20 V / +10 V)

? High switching frequency (> 1 MHz)

? Fast and controllable fall and rise times

? Reverse conduction capability

? Zero reverse recovery loss

? Source Sense (SS) pin for optimized gate drive

? RoHS 3 (6+4) compliant

Applications

? Bridgeless Totem Pole PFC

? Consumer, Industrial and Datacenter High

Density Power Supply

? High Power Adapters

? LED Lighting Drivers

? Appliance and Industrial Motor Drives

? Solar Inverter

? Uninterruptable Power Supplies

? Laser Drivers

? Wireless Power Transfer

Description

The GS-065-030-2-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology? cell layout which realizes high-current die and high yield. The GS-065-030-2-L is a bottom-side cooled transistor that offers low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.