GS-065-011-1-L中文資料GAN數(shù)據(jù)手冊PDF規(guī)格書

Features

? 650 V enhancement mode power transistor

? 850 V transient drain-to-source voltage

? Bottom-cooled, small 5x6 mm PDFN package

? RDS(on) = 150 mΩ

? IDSmax,DC = 11 A / IDSmax,Pulse = 19A

? Ultra-low FOM

? Simple gate drive requirements (0 V to 6 V)

? Transient tolerant gate drive (-20 V / +10 V)

? High switching frequency (> 1 MHz)

? Fast and controllable fall and rise times

? Reverse conduction capability

? Zero reverse recovery loss

? Source Sense (SS) pin for optimized gate drive

? RoHS 3 (6+4) compliant

Applications

? Power Adapters

? LED Lighting Drivers

? Fast Battery Charging

? Power Factor Correction

? Appliance Motor Drives

? Wireless Power Transfer

? Industrial Power Supplies

Description

The GS-065-011-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology? cell layout which realizes high-current die and high yield. The GS-065-011-1-L is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.