GS-065-011-6-LR-MR中文資料GAN數(shù)據(jù)手冊(cè)PDF規(guī)格書

Features

? 700 V enhancement mode power transistor

? 850 V transient drain-to-source voltage

? Bottom-cooled, 8x8 mm PDFN package

? RDS(on) = 125 m?

? IDSmax,DC = 12.2 A / IDSmax,Pulse = 20 A

? Ultra-low FOM

? Simple gate drive requirements (0 V to 6 V)

? Transient tolerant gate drive (-20 V / +10 V)

? High switching frequency (> 1 MHz)

? Fast and controllable fall and rise times

? Reverse conduction capability

? Zero reverse recovery loss

? Source Sense (SS) pin for optimized gate drive

? RoHS 3 (6+4) compliant

Applications

? Power Adapters

? LED Lighting Drivers

? Fast Battery Charging

? Power Factor Correction

? Appliance Motor Drives

? Wireless Power Transfer

? Industrial Power Supplies

Description

The GS-065-011-6-LR is an enhancement mode

GaN-on-Silicon power transistor. The properties of

GaN allow for high current, high voltage breakdown

and high switching frequency. GaN Systems

innovates with industry leading advancements such

as patented Island Technology? cell layout which

realizes high-current die and high yield. The GS065-011-6-LR is a bottom-side cooled transistor

that offers very low junction-to-case thermal

resistance for demanding high power applications.

These features combine to provide very high

efficiency power switching.