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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
GW30N120KD	文件：359.23 Kbytes Page：13 Pages	30A-1200V-shortcircuitruggedIGBT	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
GWA30N120KD	文件：423.46 Kbytes Page：15 Pages	30A,1200VshortcircuitruggedIGBTwithUltrafastdiode Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH?p	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
HGTG30N120CN	文件：81.32 Kbytes Page：7 Pages	75A,1200V,NPTSeriesN-ChannelIGBT TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip	Intersil Intersil Corporation	Intersil
HGTG30N120CN	文件：40.5 Kbytes Page：5 Pages	30A,1200VN-ChannelIGBT Description TheHGTG30N120D2isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarie	Intersil Intersil Corporation	Intersil
HGTG30N120CN	文件：113.21 Kbytes Page：8 Pages	75A,1200V,NPTSeriesN-ChannelIGBT TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HIH30N120TF	文件：892.05 Kbytes Page：8 Pages	1200VFieldStopTrenchIGBT	SEMIHOW SemiHow Co.,Ltd.	SEMIHOW
IHW30N120R	文件：201.5 Kbytes Page：10 Pages	HighSpeed2-Technology ?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IHW30N120R	文件：977.75 Kbytes Page：12 Pages	IGBTwithmonolithicbodydiodeforsoftswitchingApplications	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IXDH30N120	文件：89.51 Kbytes Page：4 Pages	HighVoltageIGBTwithoptionalDiode	IXYS IXYS Corporation	IXYS
IXDH30N120	文件：94.32 Kbytes Page：4 Pages	HighVoltageIGBTwithoptionalDiode ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M	IXYS IXYS Corporation	IXYS
IXDR30N120	文件：69.09 Kbytes Page：4 Pages	HighVoltageIGBTwithoptionalDiodeISOPLUSTMpackage HighVoltageIGBTwithoptionalDiodeISOPLUS?package(ElectricallyIsolatedBackSide) ShortCircuitSOACapability SquareRBSOA Features ?NPTIGBTtechnology -highswitchingspeed -lowswitchinglosses -squareRBSOA,nolatchup -highshortcircuitcapability -	IXYS IXYS Corporation	IXYS
IXDT30N120	文件：94.32 Kbytes Page：4 Pages	HighVoltageIGBTwithoptionalDiode ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M	IXYS IXYS Corporation	IXYS
IXDT30N120	文件：89.51 Kbytes Page：4 Pages	HighVoltageIGBTwithoptionalDiode	IXYS IXYS Corporation	IXYS
IXFB30N120P	文件：147.92 Kbytes Page：5 Pages	PolarHiPerFETPowerMOSFET	IXYS IXYS Corporation	IXYS
IXFL30N120P	文件：115.87 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET	IXYS IXYS Corporation	IXYS
IXFN30N120P	文件：114.6 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET	IXYS IXYS Corporation	IXYS
IXFN30N120P	文件：137.85 Kbytes Page：5 Pages	PowerMOSFET	IXYS IXYS Corporation	IXYS
IXGA30N120	文件：348.6 Kbytes Page：3 Pages	TrenchgateField-StopIGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=3.5V@IC=30A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·FrequencyConverters ·AirConditioning ·UPS,PFC ·MotorDrives	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
KGT30N120NDA	文件：592.77 Kbytes Page：8 Pages	Highspeedswitching	KECKEC CORPORATION KEC株式會(huì)社	KEC
KGT30N120NDH	文件：593.17 Kbytes Page：8 Pages	Highspeedswitching	KECKEC CORPORATION KEC株式會(huì)社	KEC

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
貿(mào)澤芯城（深圳）電子科技有限公司	G30N120RUF	FAIRCHILD/仙童	23+	TO3P	10000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
深圳市博浩通科技有限公司	G30N120RUFD	FAIRCHILD	23+	TO-247	6680	全新原裝優(yōu)勢(shì)	詢價(jià)
艾睿國(guó)際（香港）有限公司	G30N20K	GOFORD(谷峰)	2117+	TO-252	315000	一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨	詢價(jià)
現(xiàn)代芯城（深圳）科技有限公司	G30N20K		24+	N/A	62000	一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇	詢價(jià)
深圳市利加科技有限公司	G30N60	FAIRCHILD	16+	TO-3PL	10000	全新原裝現(xiàn)貨	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	G30N60	原廠	23+	TO-3P	5000	原裝正品,假一罰十	詢價(jià)
深圳市鑫宇楊電子科技有限公司	G30N60	FAIRCHILD	2020+	TO-3PL	350000	100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	G30N60	FAIRCHI	2018+	TO247	6528	承若只做進(jìn)口原裝正品假一賠十!	詢價(jià)
深圳誠(chéng)思涵科技有限公司	G30N60	FAIRCHILD	18+	TO-3P	85600	保證進(jìn)口原裝可開17%增值稅發(fā)票	詢價(jià)
深圳市錦喆鴻電子有限公司	G30N60	仙童Fairchild/FSC	21+	TO247	12588	原裝現(xiàn)貨,量大可定	詢價(jià)

更多G30N120RUF供應(yīng)商更新時(shí)間2024-11-1 14:47:00

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