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GAL22V10B-10LJ

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10B-10LP

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10B-15LJ

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10B-15LJI

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10B-15LP

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10B-15QJ

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10B-20LJI

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10B-20LPI

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10B-25LJ

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10B-25LJI

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10B-25LP

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10B-25LPI

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10B-25QJ

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10B-25QP

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10B-7LJ

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10B-7LP

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10B-7LPI

High Performance E2CMOS PLD Generic Array Logic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    GAL22V10B

  • 制造商:

    Lattice Semiconductor Corporation

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
LATTICE
19+
DIP
15876
詢價(jià)
LATTICE
最新
1000
原裝正品現(xiàn)貨
詢價(jià)
Lattice(萊迪斯)
23+
特價(jià)
6000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
LATTIC
24+
DIP
4000
原裝原廠代理 可免費(fèi)送樣品
詢價(jià)
LATTICE
24+
DIP
8000
只做原裝正品現(xiàn)貨
詢價(jià)
LATTIC
2023+
DIP
3500
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
詢價(jià)
LAT
05+
原廠原裝
4304
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
LATTICE
2016+
DIP24
5562
只做進(jìn)口原裝現(xiàn)貨!或訂貨!假一賠十!
詢價(jià)
LATTICE
24+
DIP
9
詢價(jià)
Lattice
2015+
DIP
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
詢價(jià)
更多GAL22V10B供應(yīng)商 更新時(shí)間2025-1-14 13:30:00