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首頁 >FQI10N20LTU>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
FQP10N20	文件：627.3 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQP10N20	文件：774.66 Kbytes Page：8 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQP10N20	文件：787.25 Kbytes Page：9 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?7.8A,200V,RDS(on)=0.36?(Max.)@VGS=10V ?LowGateCharge(Typ.13.5nC) ?LowCrss(Typ.13pF)	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQP10N20C	文件：875.37 Kbytes Page：10 Pages	200VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology. ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQP10N20C	文件：319.58 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQP10N20L	文件：302.24 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.36Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQP10N20L	文件：627.3 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQPF10N20	文件：777.64 Kbytes Page：8 Pages	200VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildSemiconductor’sproprietaryplanarstripe,DMOStechnology. Features ?6.8A,200V,RDS(on)=0.36?(Max.)@VGS=10V ?LowGateCharge(Typ.13.5nC) ?LowCrss(Typ.13pF)	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQPF10N20C	文件：313.87 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?FEATURES ?Withlowgatedriverequirements ?Easytodrive ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQPF10N20C	文件：875.37 Kbytes Page：10 Pages	200VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology. ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQPF10N20L	文件：569.5 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?6.8A,200V,RDS(on)=0.36?@VGS=10V ?Lowgatecharge(typical13nC) ?LowCrss(typical14pF) ?Fa	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQU10N20	文件：787.25 Kbytes Page：9 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?7.8A,200V,RDS(on)=0.36?(Max.)@VGS=10V ?LowGateCharge(Typ.13.5nC) ?LowCrss(Typ.13pF)	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQU10N20	文件：331.38 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQU10N20	文件：788.66 Kbytes Page：9 Pages	200VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQU10N20C	文件：549.66 Kbytes Page：9 Pages	N-ChannelQFETMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?7.8A,200V,RDS(on)=360m?(Max.)@VGS=10V,ID=3.9A ?LowGateCharge(Typ.20nC) ?LowCrss(Typ	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQU10N20C	文件：1.28335 Mbytes Page：9 Pages	N-ChannelQFETMOSFET200V,7.8A,360mOhm GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?7.8A,200V,RDS(on)=360m?(Max.)@VGS=10V,ID=3.9A ?LowGateCharge(Typ.20nC) ?LowCrss(Typ	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQU10N20C	文件：589.53 Kbytes Page：9 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?7.8A,200V,RDS(on)=360m?(Max.)@VGS=10V,ID=3.9A ?LowGateCharge(Typ.20nC) ?LowCrss(Typ	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQU10N20C	文件：330.98 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.8A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.36Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQU10N20CTU	文件：342.91 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.8A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.36Ω(Max)@VGS=10V APPLICATIONS ·MotorDrive,DC-DCConverter,PowerSwitch andSolenoidDrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQU10N20CTU	文件：549.66 Kbytes Page：9 Pages	N-ChannelQFETMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?7.8A,200V,RDS(on)=360m?(Max.)@VGS=10V,ID=3.9A ?LowGateCharge(Typ.20nC) ?LowCrss(Typ	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild

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詳細參數(shù)

型號：
FQI10N20LTU
功能描述：
MOSFET
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導通）：
0.014 Ohms
配置：
Single
安裝風格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市航潤創(chuàng)能電子集團有限公司	FQI10N20LTU	FSC	21+	TO-262	980	原裝現(xiàn)貨假一賠十	詢價
深圳市威雅利發(fā)展有限公司	FQI10N20LTU	FSC	0117+	TO-262	980	一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價
深圳市得捷芯城科技有限公司	FQI10N20LTU	FAIRCHILD/仙童	23+	NA/	980	優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票	詢價
深圳市安富世紀電子有限公司	FQI10N20LTU	FSC	23+	TO-262	980	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳市威爾健半導體有限公司	FQI10N20LTUMOS(場效應管)	FAIRCHILD/仙童	23+	TO-262	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳廊盛科技有限公司	FQI10N20LTUMOS(場效應管)	FAIRCHILD/仙童	2022	TO-262	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價
深圳市星佑電子有限公司	FQI10N60	仙童	06+	TO-262	2500	原裝	詢價
深圳市一線半導體有限公司	FQI10N60C	FAIRCHILD	24+	TO-262(I2PAK)	8866		詢價
深圳市永貝爾科技有限公司	FQI10N60C	FAIRCHILD	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
深圳市科恒偉業(yè)電子有限公司	FQI10N60C	FAIRC	1822+	TO-262(I2	9852	只做原裝正品假一賠十為客戶做到零風險!!	詢價

更多FQI10N20LTU供應商更新時間2025-1-17 17:24:00

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