| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
FQP10N20 | 200V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?7.8A,200V,RDS(on)=0.36?(Max.)@VGS=10V ?LowGateCharge(Typ.13.5nC) ?LowCrss(Typ.13pF) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
FQP10N20 | 200V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
FQP10N20 | 200V LOGIC N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
200V N-Channel MOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology. ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
200V LOGIC N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.36Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
200VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildSemiconductor’sproprietaryplanarstripe,DMOStechnology. Features ?6.8A,200V,RDS(on)=0.36?(Max.)@VGS=10V ?LowGateCharge(Typ.13.5nC) ?LowCrss(Typ.13pF) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor ?FEATURES ?Withlowgatedriverequirements ?Easytodrive ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
200VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology. ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?6.8A,200V,RDS(on)=0.36?@VGS=10V ?Lowgatecharge(typical13nC) ?LowCrss(typical14pF) ?Fa | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?7.8A,200V,RDS(on)=0.36?(Max.)@VGS=10V ?LowGateCharge(Typ.13.5nC) ?LowCrss(Typ.13pF) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
200VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.8A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.36Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelQFETMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?7.8A,200V,RDS(on)=360m?(Max.)@VGS=10V,ID=3.9A ?LowGateCharge(Typ.20nC) ?LowCrss(Typ | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelQFETMOSFET200V,7.8A,360mOhm GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?7.8A,200V,RDS(on)=360m?(Max.)@VGS=10V,ID=3.9A ?LowGateCharge(Typ.20nC) ?LowCrss(Typ | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?7.8A,200V,RDS(on)=360m?(Max.)@VGS=10V,ID=3.9A ?LowGateCharge(Typ.20nC) ?LowCrss(Typ | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelQFETMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?7.8A,200V,RDS(on)=360m?(Max.)@VGS=10V,ID=3.9A ?LowGateCharge(Typ.20nC) ?LowCrss(Typ | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.6A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.36Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
詳細參數(shù)
- 型號：
FQP10N20
- 功能描述：
MOSFET 200V N-Channel QFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO-220 |
599 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
FAIRCHILD |
24+ |
TO-220 |
8866 |
詢價 | |||
FAIRCHILD |
15+ |
TO-220 |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應(yīng) |
詢價 | ||
FAIRCHI |
2020+ |
TO220 |
659 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
仙童/三星 |
23+ |
TO-220 |
3000 |
全新原裝 |
詢價 | ||
KERSEMI |
24+ |
D18 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
KERSEMI |
20+ |
TO-220 |
38900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
FSC |
2020+ |
TO-220 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
FSC |
2023+ |
TO-220 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 |
相關(guān)規(guī)格書
更多- FQP10N20C
- FQP11P06
- FQP12P10
- FQP13N06L
- FQP13N10L
- FQP13N50C_G
- FQP15P12
- FQP16N25C
- FQP17P06
- FQP19N20
- FQP20N06
- FQP22N30
- FQP27N25
- FQP27P06_SW82127
- FQP2N80
- FQP2P40_F080
- FQP30N06L
- FQP33N10
- FQP3N30
- FQP3N60C
- FQP3P20
- FQP44N10
- FQP46N15
- FQP4N20L
- FQP4N90C
- FQP50N06
- FQP55N10
- FQP65N06
- FQP6N40CF
- FQP6N80C
- FQP70N10
- FQP7P06
- FQP8N60C
- FQP8N90C
- FQP9N30
- FQP9P25
- FQPF10N50CF
- FQPF11N50CF
- FQPF13N06L
- FQPF15P12
- FQPF16N25C
- FQPF19N10
- FQPF19N20C
- FQPF20N06L
- FQPF22P10
相關(guān)庫存
更多- FQP11N40C
- FQP12N60C
- FQP12P20
- FQP13N10
- FQP13N50
- FQP14N30
- FQP16N25
- FQP17N40
- FQP17P10
- FQP19N20C
- FQP20N06L
- FQP24N08
- FQP27P06
- FQP2N60C
- FQP2N90
- FQP30N06
- FQP32N20C
- FQP34N20
- FQP3N50C
- FQP3N80C
- FQP3P50
- FQP45N15V2
- FQP47P06
- FQP4N80
- FQP4P40
- FQP50N06L
- FQP5N60C
- FQP6N40C
- FQP6N60C
- FQP6N90C
- FQP7N80C
- FQP85N06
- FQP8N80C
- FQP8P10
- FQP9N90C
- FQPF10N20C
- FQPF11N40C
- FQPF11P06
- FQPF13N50CF
- FQPF16N15
- FQPF17N40T
- FQPF19N20
- FQPF20N06
- FQPF22N30
- FQPF27N25
