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FQP19N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=19.4A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQP19N20

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP19N20C

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP19N20L

200VLOGICN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF19N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=11.8A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQPF19N20

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF19N20C

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF19N20C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.17Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQPF19N20L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12.8A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.14Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQPF19N20L

200VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

JCS19N20

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS19N20C-O-C-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS19N20F-O-F-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

KF19N20D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=15A ?Dr

KECKEC CORPORATION

KEC株式會(huì)社

KF19N20F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=200V,ID

KECKEC CORPORATION

KEC株式會(huì)社

KSM19N20

200VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF19N20

200VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

TSM19N20

200VN-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

TSM19N20CPROG

200VN-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    FQI19N20TU

  • 功能描述:

    MOSFET 200V N-Channel QFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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onsemi(安森美)
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8498
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FSC
24+
TO-262
5000
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FAIRCHILD
TO-220
37526
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harris
16+
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10000
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8560
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23+
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11375
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TO-220
100500
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21+
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850
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23+
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10000
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50000
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更多FQI19N20TU供應(yīng)商 更新時(shí)間2025-1-17 16:12:00