国产无套粉嫩白浆在,久久夜色精品国产网站

首頁 >FQA6N80>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
FQA6N80	文件：677.25 Kbytes Page：8 Pages	800V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQA6N80	文件：369.65 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=6.3A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.95Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQAF6N80	文件：661.2 Kbytes Page：8 Pages	800VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQAF6N80	文件：329.47 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=4.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.95Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQB6N80	文件：683.56 Kbytes Page：9 Pages	800VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQB6N80	文件：287.84 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5.8A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.95Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQB6N80	文件：294.05 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5.8A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.95Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQI6N80	文件：683.56 Kbytes Page：9 Pages	800VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQP6N80	文件：674.36 Kbytes Page：8 Pages	800VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQP6N80C	文件：306.33 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQP6N80C	文件：1.01814 Mbytes Page：10 Pages	N-ChannelQFET?MOSFET800V,5.5A,2.5廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQP6N80C	文件：855.56 Kbytes Page：10 Pages	N-ChannelQFETMOSFET	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQP6N80C	文件：889.91 Kbytes Page：10 Pages	800VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQPF6N80	文件：665.92 Kbytes Page：8 Pages	800VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQPF6N80C	文件：855.56 Kbytes Page：10 Pages	N-ChannelQFETMOSFET	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQPF6N80C	文件：889.91 Kbytes Page：10 Pages	800VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQPF6N80C	文件：1.01814 Mbytes Page：10 Pages	N-ChannelQFET?MOSFET800V,5.5A,2.5廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQPF6N80CT	文件：1.01814 Mbytes Page：10 Pages	N-ChannelQFET?MOSFET800V,5.5A,2.5廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQPF6N80T	文件：278.87 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.3A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.95Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
HM6N80K	文件：471.75 Kbytes Page：9 Pages	Powerswitchcircuitofadaptorandcharger	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導體深圳市華之美半導體有限公司	HMSEMI

12 3 >>>

詳細參數

型號：
FQA6N80
功能描述：
MOSFET 800V N-Channel QFET
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導通）：
0.014 Ohms
配置：
Single
安裝風格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市高捷芯城科技有限公司	FQA6N80	onsemi(安森美)	23+	TO-3P	7814	支持大陸交貨,美金交易。原裝現貨庫存。	詢價
深圳市一線半導體有限公司	FQA6N80	FAIRCHILD	24+	TO-3PN	8866		詢價
深圳市科恒偉業(yè)電子有限公司	FQA6N80	FAIRCHI	2016+	TO-3P	6528	房間原裝進口現貨假一賠十	詢價
深圳市永貝爾科技有限公司	FQA6N80	FAIRCHILD	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
深圳市鼎盛源芯科技有限公司	FQA6N80	harris	16+	原廠封裝	10000	全新原裝正品,代理優(yōu)勢渠道供應,歡迎來電咨詢	詢價
深圳市正邁科技有限公司	FQA6N80	FSC/ON	23+	原包裝原封 □□	1165	原裝進口特價供應 QQ 1304306553 更多詳細咨詢庫存	詢價
深圳市賽爾通科技有限公司	FQA6N80		23+	TO-3PE	65480		詢價
上海市鑫鴻達電子	FQA6N80	FAIRCHILD/仙童	2022+		85	全新原裝貨期兩周	詢價
瀚佳科技(深圳)有限公司	FQA6N80	FAIRC	2020+	TO-3P	16800	絕對原裝進口現貨,假一賠十,價格優(yōu)勢!?	詢價
深圳市艾宇特電子科技有限公司	FQA6N80		2046+	TO247	9852	只做原裝正品現貨!或訂貨假一賠十!	詢價

更多FQA6N80供應商更新時間2024-10-22 18:02:00

詳細參數

相關規(guī)格書

相關庫存