| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
FP9210 | RF AMPLIFIER MODEL Features HighGain:29dBTypical OperatingTemp.-55oCto+85oC EnvironmentalScreeningAvailable TypicalIntermodulationPerformanceat25oC SecondOrderHarmonicInterceptPoint.......+39dBm(Typ.) SecondOrderTwoToneInterceptPoint........+33dBm(Typ.) Thi | APITECH API Technologies Corp | APITECH | |
PChannelPowerMOSFET | GSG Gunter Seniconductor GmbH. | GSG | ||
FrequencySynthesizer | SHOULDERShoulder 好達電子無錫市好達電子股份有限公司 | SHOULDER | ||
HERMETICALLYSEALEDRELAUY | HONGFAHongfa Technology 宏發(fā)電聲廈門宏發(fā)電聲股份有限公司 | HONGFA | ||
PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-0.40A) DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerHEXFETdesignarchieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?D | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignarchieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. The4pinDIP | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?P-channel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION ThepowerMOSFETstechnolo | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignarchieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. The4pinDIP | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
HEXFETPowerMOSFET DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerHEXFETdesignarchieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?D | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18) REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignersth | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
HEXFETTRANSISTORSTHRU-HOLE(TO-205AF) ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtr | IRF International Rectifier | IRF | ||
P-ChannelMOSFETinaHermeticallysealedTO39 | SEME-LAB Seme LAB | SEME-LAB | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-1.9A) DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD- | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NS |
23+ |
LLP-28 |
8890 |
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價 | ||
NS |
22+ |
LLP |
5000 |
進口原裝!現(xiàn)貨庫存 |
詢價 | ||
NS |
24+ |
LLP |
2987 |
絕對全新原裝現(xiàn)貨供應! |
詢價 | ||
NSC |
08+ |
LLP |
11300 |
優(yōu)勢 |
詢價 | ||
NS |
23+ |
QFN |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
NS |
23+ |
QFN-28 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
NS |
QFN |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
NS |
23+ |
QFN-28 |
3000 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 | ||
NS |
22+ |
QFN |
8000 |
原裝正品支持實單 |
詢價 | ||
NS |
05+ |
QFN-28 |
110 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 |
