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HDM9210

Frequency Synthesizer

SHOULDERShoulder

好達(dá)電子無(wú)錫市好達(dá)電子股份有限公司

HF9210

HERMETICALLYSEALEDRELAUY

HONGFAHongfa Technology

宏發(fā)電聲廈門宏發(fā)電聲股份有限公司

IRFD9210

PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-0.40A)

DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerHEXFETdesignarchieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?D

IRF

International Rectifier

IRFD9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignarchieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. The4pinDIP

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9210

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?P-channel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION ThepowerMOSFETstechnolo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9210PBF

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignarchieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. The4pinDIP

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9210PBF

HEXFETPowerMOSFET

DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerHEXFETdesignarchieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?D

IRF

International Rectifier

IRFD9210PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE9210

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignersth

IRF

International Rectifier

IRFE9210

SimpleDriveRequirements

IRF

International Rectifier

IRFF9210

HEXFETTRANSISTORSTHRU-HOLE(TO-205AF)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtr

IRF

International Rectifier

IRFF9210

P-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF9210

SimpleDriveRequirements

IRF

International Rectifier

IRFR9210

PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-1.9A)

DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD-

IRF

International Rectifier

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9210,SiHFR9210) ?Straightlead(IRFU9210,SiHFU9210) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    HDM9210

  • 制造商：

    SHOULDER

  • 制造商全稱：

    SHOULDER

  • 功能描述：

    Frequency Synthesizer

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ASTEC
23+
模塊
130
全新原裝正品,量大可訂貨!可開(kāi)17%增值票!價(jià)格優(yōu)勢(shì)!
 詢價(jià)
ASTEC
23+
模塊
3562
詢價(jià)
ASTEC
6000
面議
19
 專營(yíng)模塊
 詢價(jià)
ASTEC
專業(yè)模塊
MODULE
8513
模塊原裝主營(yíng)-可開(kāi)原型號(hào)增稅票
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ASTEC
2018+
module
6000
全新原裝正品現(xiàn)貨,假一賠佰
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ASTEC
18+
2173
公司大量全新正品 隨時(shí)可以發(fā)貨
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ASTEC
24+
模塊
6430
原裝現(xiàn)貨/歡迎來(lái)電咨詢
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ASTEC
2015
模塊
300
十七年VIP會(huì)員,誠(chéng)信經(jīng)營(yíng)，一手貨源，原裝正品可零售！
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ASTEC
22+
SOT-2899&NBS
200
專營(yíng)模塊
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原廠
2023+
模塊
600
專營(yíng)模塊,繼電器,公司原裝現(xiàn)貨
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更多HDM9210供應(yīng)商 更新時(shí)間2024-12-24 16:30:00

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