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BFP420W

isc Silicon NPN RF Transistor

DESCRIPTION ?HighPowerGain ?HighCurrentGainBandwidthProduct ?LowNoiseFigure ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?DesignedforuseinRFwidebandamplifiersandoscillators.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BFV420

NPNhigh-voltagetransistor

DESCRIPTION NPNhigh-voltagetransistorinaTO-92;SOT54plasticpackage.PNPcomplement:BFV421. FEATURES ?Lowcurrent(max.100mA) ?Highvoltage(max.100V). APPLICATIONS ?Primarilyintendedforvideoapplications(monitors).

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFY420

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY420

HiRelNPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY420ES

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY420H

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY420P

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY420S

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BGA420

Si-MMIC-AmplifierinSIEGET25-Technologie(Cascadable50廓-gainblockUnconditionallystable)

Si-MMIC-AmplifierinSIEGET?25-Technologie Preliminarydata ?Cascadable50?-gainblock ?Unconditionallystable ?Gain|S21|2=13dBat1.8GHzIP3out=+9dBmat1.8GHz(VD=3V,ID=typ.6.4mA) ?NoisefigureNF=2.2dBat1.8GHz ?Reverseisolation>28dBandreturnlossIN/O

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BGA420

Si-MMIC-AmplifierinSIEGET25-Technologie

Si-MMIC-AmplifierinSIEGET?25-Technologie ?Cascadable50?-gainblock ?Unconditionallystable ?Gain|S21|2=13dBat1.8GHzIP3out=+13dBmat1.8GHz(VD=3V,ID=typ.6.7mA) ?NoisefigureNF=2.2dBat1.8GHz ?Reverseisolation>28dBandreturnlossIN/OUT>12dBat1.8

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BGA420

Si-MMIC-AmplifierinSIEGET25-Technologie

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BGB420

ActiveBiasedTransistor

Description SIEGET?-25NPNTransistorwithintegratedbiasingforhighgainlownoisefigureapplications.ICcanbecontrolledusingIBiasaccordingtoIC=10*IBias. Features ?Forhighgainlownoiseamplifiers ?Idealforwidebandapplications,cellulartelephones, cordlesstelephones,

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BGC420

Self-BiasedBFP420

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BGR420

NPNSiliconRFTransistorWithBiasCircuitry

Features ?NoisefigureNF=1.5dBat0.4GHz ?GainS21=26dBat0.4GHz ?Onchipbiascircuitry,13mAbiascurrentatVCC=3.6V; VBB=2.8V ?SIEGET?25GHzfT-Line ?Pb-free(RoHScompliant)package *Shorttermdescription Applications ?LNAs

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BRUS420

ULTRA-FASTRECOVERY30to35AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISPCBOARDMOUNTING

edi

Electronic devices inc.

BSD420L-C

LowCapacitanceandInsertionLoss

BencentShenzhen Bencent Electronics Co., Ltd.

檳城電子深圳市檳城電子股份有限公司

BTM420

ChangesandRevisions

LSTD

Laird Tech Smart Technology

BUF420

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION TheBUF420MismanufacturedusingHighVoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapacity.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingawideRBSOA.TheBUFseriesisdesig

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BUF420

HighVoltage

DESCRIPTION ?HighVoltage ?HighSpeedSwitching APPLICATIONS ?Designedforuseinhigh-frequencypowersuppliesand motorcontrolapplications.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BUF420

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類(lèi)制造商etc2未分類(lèi)制造商

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON
23+
SOT343
8000
只做原裝現(xiàn)貨
 詢(xún)價(jià)
INFINEON
23+
SOT343
7000
詢(xún)價(jià)
INFINEON/英飛凌
22+
SOT-343
20000
保證原裝正品,假一陪十
 詢(xún)價(jià)
INFINEON/英飛凌
23+
SOT-343
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
INFINEON/英飛凌
2022
SOT-343
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún)
 詢(xún)價(jià)
INFINEON/英飛凌
23+
12000
詢(xún)價(jià)
INFINEON
23+
9
原裝正品現(xiàn)貨,德為本,正為先,通天下!
 詢(xún)價(jià)
SIEMENS
3000
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢(xún)價(jià)
INFINEON
24+
SOT-343SOT-323-4
12700
新進(jìn)庫(kù)存/原裝
 詢(xún)價(jià)
INFINEON
24+
SOT343
3600
絕對(duì)原裝!現(xiàn)貨熱賣(mài)!
 詢(xún)價(jià)
更多BFP420W供應(yīng)商 更新時(shí)間2025-1-16 15:00:00

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