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BFY420ES

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY420H

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY420P

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY420S

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BGA420

Si-MMIC-AmplifierinSIEGET25-Technologie(Cascadable50廓-gainblockUnconditionallystable)

Si-MMIC-AmplifierinSIEGET?25-Technologie Preliminarydata ?Cascadable50?-gainblock ?Unconditionallystable ?Gain|S21|2=13dBat1.8GHzIP3out=+9dBmat1.8GHz(VD=3V,ID=typ.6.4mA) ?NoisefigureNF=2.2dBat1.8GHz ?Reverseisolation>28dBandreturnlossIN/O

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BGA420

Si-MMIC-AmplifierinSIEGET25-Technologie

Si-MMIC-AmplifierinSIEGET?25-Technologie ?Cascadable50?-gainblock ?Unconditionallystable ?Gain|S21|2=13dBat1.8GHzIP3out=+13dBmat1.8GHz(VD=3V,ID=typ.6.7mA) ?NoisefigureNF=2.2dBat1.8GHz ?Reverseisolation>28dBandreturnlossIN/OUT>12dBat1.8

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BGA420

Si-MMIC-AmplifierinSIEGET25-Technologie

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BGB420

ActiveBiasedTransistor

Description SIEGET?-25NPNTransistorwithintegratedbiasingforhighgainlownoisefigureapplications.ICcanbecontrolledusingIBiasaccordingtoIC=10*IBias. Features ?Forhighgainlownoiseamplifiers ?Idealforwidebandapplications,cellulartelephones, cordlesstelephones,

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BGC420

Self-BiasedBFP420

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BGR420

NPNSiliconRFTransistorWithBiasCircuitry

Features ?NoisefigureNF=1.5dBat0.4GHz ?GainS21=26dBat0.4GHz ?Onchipbiascircuitry,13mAbiascurrentatVCC=3.6V; VBB=2.8V ?SIEGET?25GHzfT-Line ?Pb-free(RoHScompliant)package *Shorttermdescription Applications ?LNAs

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BRUS420

ULTRA-FASTRECOVERY30to35AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISPCBOARDMOUNTING

edi

Electronic devices inc.

BSD420L-C

LowCapacitanceandInsertionLoss

BencentShenzhen Bencent Electronics Co., Ltd.

檳城電子深圳市檳城電子股份有限公司

BTM420

ChangesandRevisions

LSTD

Laird Tech Smart Technology

BUF420

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION TheBUF420MismanufacturedusingHighVoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapacity.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingawideRBSOA.TheBUFseriesisdesig

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BUF420

HighVoltage

DESCRIPTION ?HighVoltage ?HighSpeedSwitching APPLICATIONS ?Designedforuseinhigh-frequencypowersuppliesand motorcontrolapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BUF420

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

BUF420A

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION TheBUF420AismanufacturedusingHighVoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapacity.ItuseaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingawideRBSOA.TheBUFseriesisdesigned

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BUF420A

HighVoltage

DESCRIPTION ?HighVoltage ?HighSpeedSwitching APPLICATIONS ?Designedforuseinhigh-frequencypowersuppliesand motorcontrolapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BUF420AW

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION TheBUF420AWismanufacturedusingHighVoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapacity.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingawideRBSOA.TheBUFseriesisdesign

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BUF420AW

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterSustainingVoltage- :VCEO(SUS)=450V(Min.) ·HighSpeedSwitching ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforuseinhigh-frequencypowersuppliesand motorcontrolap

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    BFY420ES

  • 制造商：

    INFINEON

  • 制造商全稱：

    Infineon Technologies AG

  • 功能描述：

    HiRel NPN Silicon RF Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
INFINEON
22+
16+
8000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
INFINEON
23+
16+
8000
只做原裝現(xiàn)貨
 詢價(jià)
INFINEON
23+
16+
7000
詢價(jià)
MOT/PHI
16+
CAN
9500
原裝現(xiàn)貨假一罰十
 詢價(jià)
MOT/ST/PH
2339+
CAN3
21322
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
 詢價(jià)
MOT/PHI
專業(yè)鐵帽
CAN
9500
原裝鐵帽專營,代理渠道量大可訂貨
 詢價(jià)
MOT/PHI
專業(yè)鐵帽
CAN
67500
鐵帽原裝主營-可開原型號(hào)增稅票
 詢價(jià)
PH
24+
CAN
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價(jià)
KRC
24+
10
詢價(jià)
更多BFY420ES供應(yīng)商 更新時(shí)間2024-12-28 9:02:00

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