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BFG67

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG67

NPN 8 GHz wideband transistors

DESCRIPTION NPNsilicontransistorina4-pin,dual-emitterSOT143Bplasticpackage.Availablewithin-lineemitterpinning(BFG67)andcrossemitterpinning(BFG67/X).Versionwithreversepinning(BFG67/XR)alsoavailableonrequest. FEATURES ?Highpowergain ?Lownoisefigure ?Hightran

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG67

Silicon NPN Planar RF Transistor

Features ?Smallfeedbackcapacitance ?Lownoisefigure ?Hightransitionfrequency ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/EC andWEEE2002/96/EC Applications ??Lownoisesmallsignalamplifiersupto2GHz.This ??transistorhassuperiornoisefigureand

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFG67

NPN 8 GHz wideband transistors

DESCRIPTION NPNsilicontransistorina4-pin,dual-emitterSOT143Bplasticpackage.Availablewithin-lineemitterpinning(BFG67)andcrossemitterpinning(BFG67/X).Versionwithreversepinning(BFG67/XR)alsoavailableonrequest. FEATURES ?Highpowergain ?Lownoisefigure ?Hightran

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG67

Silicon NPN Planar RF Transistor

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFG67/X

NPN 8 GHz wideband transistors

DESCRIPTION NPNsilicontransistorina4-pin,dual-emitterSOT143Bplasticpackage.Availablewithin-lineemitterpinning(BFG67)andcrossemitterpinning(BFG67/X).Versionwithreversepinning(BFG67/XR)alsoavailableonrequest. FEATURES ?Highpowergain ?Lownoisefigure ?Hightran

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG67/X

NPN 8 GHz wideband transistors

DESCRIPTION NPNsilicontransistorina4-pin,dual-emitterSOT143Bplasticpackage.Availablewithin-lineemitterpinning(BFG67)andcrossemitterpinning(BFG67/X).Versionwithreversepinning(BFG67/XR)alsoavailableonrequest. FEATURES ?Highpowergain ?Lownoisefigure ?Hightran

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG67/XR

NPN 8 GHz wideband transistors

DESCRIPTION NPNsilicontransistorina4-pin,dual-emitterSOT143Bplasticpackage.Availablewithin-lineemitterpinning(BFG67)andcrossemitterpinning(BFG67/X).Versionwithreversepinning(BFG67/XR)alsoavailableonrequest. FEATURES ?Highpowergain ?Lownoisefigure ?Hightran

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG67/XR

NPN 8 GHz wideband transistors

DESCRIPTION NPNsilicontransistorina4-pin,dual-emitterSOT143Bplasticpackage.Availablewithin-lineemitterpinning(BFG67)andcrossemitterpinning(BFG67/X).Versionwithreversepinning(BFG67/XR)alsoavailableonrequest. FEATURES ?Highpowergain ?Lownoisefigure ?Hightran

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG67W

NPN 8 GHz wideband transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343andSOT343Rpackages. FEATURES ?Highpowergain ?Lownoisefigure ?Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintendedforwidebandapplicationsin

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG67W/X

NPN 8 GHz wideband transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343andSOT343Rpackages. FEATURES ?Highpowergain ?Lownoisefigure ?Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintendedforwidebandapplicationsin

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG67W/XR

NPN 8 GHz wideband transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343andSOT343Rpackages. FEATURES ?Highpowergain ?Lownoisefigure ?Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintendedforwidebandapplicationsin

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG67-X

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG67_08

Silicon NPN Planar RF Transistor

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFG67_15

NPN 8 GHz wideband transistors

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

BFG67_2015

NPN 8 GHz wideband transistors

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

BFG67,215

包裝:卷帶(TR) 封裝/外殼:TO-253-4,TO-253AA 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極(BJT)- 射頻 描述:RF TRANS NPN 10V 8GHZ SOT143B

NXP USA Inc.

NXP USA Inc.

NXP USA Inc.

BFG67,235

包裝:托盤(pán) 封裝/外殼:TO-253-4,TO-253AA 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極(BJT)- 射頻 描述:RF TRANS NPN 10V 8GHZ SOT143B

NXP USA Inc.

NXP USA Inc.

NXP USA Inc.

BFG67/X,215

包裝:卷帶(TR) 封裝/外殼:TO-253-4,TO-253AA 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極(BJT)- 射頻 描述:RF TRANS NPN 10V 8GHZ SOT143B

NXP USA Inc.

NXP USA Inc.

NXP USA Inc.

晶體管資料

  • 型號(hào):

    BFG67

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    表面帖裝型 (SMD)_甚高頻 (VHF)_超高頻/特高頻

  • 封裝形式:

    貼片封裝

  • 極限工作電壓:

    20V

  • 最大電流允許值:

    0.05A

  • 最大工作頻率:

    8GHZ

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    BFG197,

  • 最大耗散功率:

  • 放大倍數(shù):

  • 圖片代號(hào):

    H-17

  • vtest:

    20

  • htest:

    8000000000

  • atest:

    0.05

  • wtest:

    0

詳細(xì)參數(shù)

  • 型號(hào):

    BFG67

  • 制造商:

    VISHAY

  • 制造商全稱:

    Vishay Siliconix

  • 功能描述:

    Silicon NPN Planar RF Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NXP/恩智浦
23+
SOT-143
100586
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
詢價(jià)
NXP/恩智浦
24+
SOT143
7906200
一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系
詢價(jià)
NXP
2012+
SOT143
900000
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
詢價(jià)
NXP
23+
原廠封裝
12300
詢價(jià)
PHILIPS/NXP
13+
SOT143B
5138
原裝分銷
詢價(jià)
NXP恩智浦/PHILIPS飛利浦
24+
SOT-143SOT-23-4
6290
新進(jìn)庫(kù)存/原裝
詢價(jià)
NXP
2015+
SOT143
19898
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
詢價(jià)
NXP(PHILIPS)
16+
SOT143
30000
全新原裝現(xiàn)貨
詢價(jià)
NXP(PHILIPS)
2020+
SOT143
985000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
詢價(jià)
NXP
19+
SOT143
66057
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價(jià)
更多BFG67供應(yīng)商 更新時(shí)間2024-12-27 13:58:00