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BF420-BP

包裝:散裝 封裝/外殼:TO-226-3,TO-92-3 標準主體(!--TO-226AA) 類別:分立半導體產品 晶體管 - 雙極性晶體管(BJT)- 單個 描述:TRANS NPN 300V 0.1A TO92

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

BFP420

NPNSiliconRFTransistor(ForhighgainlownoiseamplifiersForoscillatorsupto10GHz)

NPNSiliconRFTransistor ?Forhighgainlownoiseamplifiers ?Foroscillatorsupto10GHz ?NoisefigureF=1.05dBat1.8GHzoutstandingGms=20dBat1.8GHz ?TransitionfrequencyfT=25GHz ?Goldmetalizationforhighreliability ?SIEGET?25-Line SiemensGroundedEmitter

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFP420

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?Forhighgainandlownoiseamplifiers ?MinimumnoisefigureNFmin=1.1dBat1.8GHzOutstandingGms=21dBat1.8GHz ?Foroscillatorsupto10GHz ?TransitionfrequencyfT=25GHz ?Pb-free(RoHScompliant)andhalogen-freepackagewithvisib

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP420

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP420F

NPNSiliconRFTransistor

ProductBrief TheBFP420FisalownoisewidebandNPNbipolarRFtransistor.ThecollectordesignsupportsvoltagesuptoVCEO=4.5VandcurrentsuptoIC=60mA.Thedeviceisespeciallysuitedformobileapplicationsinwhichlowpowerconsumptionisakeyrequirement.Thetypicaltransition

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP420F

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP420F

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP420W

iscSiliconNPNRFTransistor

DESCRIPTION ?HighPowerGain ?HighCurrentGainBandwidthProduct ?LowNoiseFigure ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?DesignedforuseinRFwidebandamplifiersandoscillators.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BFV420

NPNhigh-voltagetransistor

DESCRIPTION NPNhigh-voltagetransistorinaTO-92;SOT54plasticpackage.PNPcomplement:BFV421. FEATURES ?Lowcurrent(max.100mA) ?Highvoltage(max.100V). APPLICATIONS ?Primarilyintendedforvideoapplications(monitors).

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFY420

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY420

HiRelNPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY420ES

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY420H

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY420P

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY420S

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?ForHighGainLowNoiseAmplifiers ?ForOscillatorsupto10GHz ?NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz ?Hermeticallysealedmicrowavepackage ?TransitionFrequencyfT=22G

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BGA420

Si-MMIC-AmplifierinSIEGET25-Technologie(Cascadable50廓-gainblockUnconditionallystable)

Si-MMIC-AmplifierinSIEGET?25-Technologie Preliminarydata ?Cascadable50?-gainblock ?Unconditionallystable ?Gain|S21|2=13dBat1.8GHzIP3out=+9dBmat1.8GHz(VD=3V,ID=typ.6.4mA) ?NoisefigureNF=2.2dBat1.8GHz ?Reverseisolation>28dBandreturnlossIN/O

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BGA420

Si-MMIC-AmplifierinSIEGET25-Technologie

Si-MMIC-AmplifierinSIEGET?25-Technologie ?Cascadable50?-gainblock ?Unconditionallystable ?Gain|S21|2=13dBat1.8GHzIP3out=+13dBmat1.8GHz(VD=3V,ID=typ.6.7mA) ?NoisefigureNF=2.2dBat1.8GHz ?Reverseisolation>28dBandreturnlossIN/OUT>12dBat1.8

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BGA420

Si-MMIC-AmplifierinSIEGET25-Technologie

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BGB420

ActiveBiasedTransistor

Description SIEGET?-25NPNTransistorwithintegratedbiasingforhighgainlownoisefigureapplications.ICcanbecontrolledusingIBiasaccordingtoIC=10*IBias. Features ?Forhighgainlownoiseamplifiers ?Idealforwidebandapplications,cellulartelephones, cordlesstelephones,

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BGC420

Self-BiasedBFP420

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

產品屬性

  • 產品編號:

    BF420-BP

  • 制造商:

    Micro Commercial Co

  • 類別:

    分立半導體產品 > 晶體管 - 雙極性晶體管(BJT)- 單個

  • 包裝:

    散裝

  • 晶體管類型:

    NPN

  • 不同?Ib、Ic 時?Vce 飽和壓降(最大值):

    600mV @ 5mA,30mA

  • 電流 - 集電極截止(最大值):

    10nA(ICBO)

  • 不同?Ic、Vce?時 DC 電流增益 (hFE)(最小值):

    50 @ 25mA,20V

  • 頻率 - 躍遷:

    60MHz

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-226-3,TO-92-3 標準主體(!--TO-226AA)

  • 供應商器件封裝:

    TO-92

  • 描述:

    TRANS NPN 300V 0.1A TO92

供應商型號品牌批號封裝庫存備注價格
Micro Commercial Co
24+
TO-226-3 TO-92-3 標準主體(!-
9350
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
詢價
ph
24+
500000
行業(yè)低價,代理渠道
詢價
PHILIPS
24+
TO-92
38000
詢價
PH
16+
原廠封裝
1262
原裝現(xiàn)貨假一罰十
詢價
PHLIPS
24+
TO-92
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價
PHI
2023+
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
IR
23+
原廠封裝
5177
現(xiàn)貨
詢價
PHI
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進口現(xiàn)貨
詢價
PHI
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進口現(xiàn)貨
詢價
ONSEMICONDUC
24+
35200
一級代理/放心采購
詢價
更多BF420-BP供應商 更新時間2024-12-27 14:56:00