首頁(yè) >AIMBG120R040M1>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
AIMBG120R040M1 | CoolSiC? 1200 V SiC Trench MOSFET Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=54AatTC=25°C ?RDS(on)=40mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowes | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
CoolSiC?AutomotiveMOSFET1200VinHDSOP-22-3package Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=61AatTC=25°C ?RDS(on)=40mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestdev | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolSiC?1200VSiCTrenchMOSFET Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=55AatTC=25°C ?RDS(on)=40mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswitc | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolSiC?1200VSiCTrenchMOSFET Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=55AatTC=25°C ?RDS(on)=40mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswitc | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolSiC??1200VSiCTrenchMOSFET:siliconcarbideMOSFET Features ?VDSS=1200VatTvj=25°C ?IDCC=55AatTvj=25°C ?RDS(on)=39mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltageca | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolSiC??1200VSiCTrenchMOSFET:SiliconCarbideMOSFETwith.XTinterconnectiontechnology Features ?VDSS=1200VatTvj=25°C ?IDCC=55AatTvj=25°C ?RDS(on)=39mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltageca | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
EiceDRIVER?1ED314xMU12F(1ED-X3Compact) Features ?Single-channelisolatedgatedriver ?Forusewith600V/650V/1200V/1700V/2300VIGBTs,SiandSiCMOSFETs ?Upto6.5Atypicalpeakoutputcurrent ?45nspropagationdelaywith7nspart-to-partmatching(skew) ?35Vabsolutemaximumoutputsupplyvoltage ?Highcommon-mode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon |
23+ |
PG-TO263-7 |
15500 |
英飛凌優(yōu)勢(shì)渠道全系列在售 |
詢價(jià) | ||
INFINEON/英飛凌 |
23+ |
PG-TO263-7 |
5000 |
原裝現(xiàn)貨 |
詢價(jià) | ||
Infineon Technologies |
23+ |
TO263-7 |
3652 |
原廠正品現(xiàn)貨供應(yīng)SIC全系列 |
詢價(jià) | ||
INFINEON |
2023 |
N/N |
20000 |
全新、原裝正品,假一賠十 |
詢價(jià) | ||
Infineon |
310 |
只做正品 |
詢價(jià) | ||||
Infineon |
24+ |
- |
16728 |
只做原裝正品,專注終端BOM表整單供應(yīng) |
詢價(jià) | ||
Advantech |
22+ |
NA |
6878 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
22+ |
主板轉(zhuǎn)接卡 |
8500 |
全新正品現(xiàn)貨 有掛就有現(xiàn)貨 |
詢價(jià) | |||
ABRACON |
23+ |
SMD |
36000 |
專注電感/現(xiàn)貨足訂貨快價(jià)格優(yōu)品質(zhì)保證 |
詢價(jià) | ||
ABRACON |
20+ |
電感器 |
17900 |
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件! |
詢價(jià) |
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