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IMZA120R040M1H中文資料英飛凌數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
IMZA120R040M1H |
| 功能描述 | CoolSiC??1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology |
| 絲印標(biāo)識(shí) | |
| 封裝外殼 | PG-TO247-4-STD-T3.7 |
| 文件大小 |
1.34991 Mbytes |
| 頁面數(shù)量 |
17 頁 |
| 生產(chǎn)廠商 | Infineon Technologies AG |
| 企業(yè)簡稱 |
Infineon【英飛凌】 |
| 中文名稱 | 英飛凌科技股份公司官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-2-19 17:22:00 |
IMZA120R040M1H規(guī)格書詳情
Features
? VDSS = 1200 V at Tvj = 25°C
? IDCC = 55 A at Tvj = 25°C
? RDS(on) = 39 mΩ at VGS = 18 V, Tvj = 25°C
? Very low switching losses
? Short circuit withstand time 3 μs
? Benchmark gate threshold voltage, VGS(th) = 4.2 V
? Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
? Robust body diode for hard commutation
? .XT interconnection technology for best-in-class thermal performance
Potential applications
? General purpose drives (GPD)
? EV-Charging
? Online UPS/Industrial UP
? String inverters
? Solar power optimizer
Product validation
? Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INFINEON |
22+ |
NA |
1206 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
Infineon/英飛凌 |
23+ |
PG-TO247-4-3 |
25630 |
原裝正品 |
詢價(jià) | ||
Infineon/英飛凌 |
24+ |
PG-TO247-4-3 |
30000 |
原裝正品公司現(xiàn)貨,假一賠十! |
詢價(jià) | ||
Infineon/英飛凌 |
23+ |
PG-TO247-4-3 |
12700 |
買原裝認(rèn)準(zhǔn)中賽美 |
詢價(jià) | ||
Infineon/英飛凌 |
21+ |
PG-TO247-4-3 |
6000 |
原裝現(xiàn)貨正品 |
詢價(jià) | ||
Infineon/英飛凌 |
2022+ |
PG-TO247-4-3 |
48000 |
只做原裝,原裝,假一罰十 |
詢價(jià) | ||
23+ |
NA |
6800 |
原裝正品,力挺實(shí)單 |
詢價(jià) | |||
Infineon/英飛凌 |
21+ |
PG-TO247-4-3 |
6820 |
只做原裝,質(zhì)量保證 |
詢價(jià) | ||
Infineon |
24+ |
TO-247-4 |
3526 |
專注Infineon品牌原裝正品代理分銷,認(rèn)準(zhǔn)水星電子 |
詢價(jià) | ||
Infineon Technologies |
23+ |
SMD |
3652 |
原廠正品現(xiàn)貨供應(yīng)SIC全系列 |
詢價(jià) |
