首頁(yè) >2SK3113-AZ>規(guī)格書(shū)列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113isN-channelDMOSFETdevicethatfeatures alowgatechargeandexcellentswitchingcharacteristic,and designedforhighvoltageapplicationssuchasswitching powersupply,ACadapter. FEATURES ?Lowon-stateresistance RDS( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFieldEffectTransistor Features Lowon-stateresistanceRDS(on)=4.4?MAX.(VGS=10V,ID=1.0A) Lowgatecharge QG=9nCTYP.(VDD=450V,VGS=10V,ID=2.0A) Gatevoltagerating±30V Avalanchecapabilityratings | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3113isN-channelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristic,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ?Lowon-stateresistance RDS(on)=4.4?MAX.(VGS=10V,ID=1.0 | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ?Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A) | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ?Lowon-stateresistance RDS(o | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113isN-channelDMOSFETdevicethatfeatures alowgatechargeandexcellentswitchingcharacteristic,and designedforhighvoltageapplicationssuchasswitching powersupply,ACadapter. FEATURES ?Lowon-stateresistance RDS( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3113isN-channelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristic,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ?Lowon-stateresistance RDS(on)=4.4?MAX.(VGS=10V,ID=1.0 | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC |
詳細(xì)參數(shù)
- 型號(hào):
2SK3113-AZ
- 制造商:
Renesas Electronics
- 功能描述:
Nch 600V 2A 4400m@10V TO251 Bulk
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
NEC |
22+23+ |
TO-251 |
28284 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢(xún)價(jià) | ||
NEC |
23+ |
TO-251 |
30000 |
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì) |
詢(xún)價(jià) | ||
NEC |
22+ |
TO-251 |
20000 |
保證原裝正品,假一陪十 |
詢(xún)價(jià) | ||
NEC |
21+ |
TO-251 |
11140 |
原裝現(xiàn)貨假一賠十 |
詢(xún)價(jià) | ||
RENESAS/瑞薩 |
23+ |
TO-251 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
RENESAS/瑞薩 |
2022 |
TO-251 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún) |
詢(xún)價(jià) | ||
NEC |
22+ |
TO-251 |
6000 |
十年配單,只做原裝 |
詢(xún)價(jià) | ||
RENESAS |
11+ |
TO-251 |
2030 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) | ||
NEC |
22+ |
TO-251 |
100000 |
代理渠道/只做原裝/可含稅 |
詢(xún)價(jià) | ||
RENESAS |
589220 |
16余年資質(zhì) 絕對(duì)原盒原盤(pán) 更多數(shù)量 |
詢(xún)價(jià) |
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