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2SK3113B

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ?Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3113B

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ?Lowon-stateresistance RDS(o

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3113B-S15-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ?Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3113B-S15-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ?Lowon-stateresistance RDS(o

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3113B-S27-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ?Lowon-stateresistance RDS(o

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3113B-ZK-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ?Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3113B-ZK-E1-AY

N-Channel 650 V (D-S) MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

2SK3113B-ZK-E1-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ?Lowon-stateresistance RDS(o

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3113B-ZK-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ?Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3113B-ZK-E2-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ?Lowon-stateresistance RDS(o

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    2SK3113B

  • 制造商：

    Renesas Electronics Corporation

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NEC
24+
TO-251
8866
詢價(jià)
NEC
17+
TO-251
60000
保證原裝進(jìn)口現(xiàn)貨可開17%增值稅發(fā)票
 詢價(jià)
NEC
1822+
TO-251
6852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
RENESAS/瑞薩
2022+
1790
全新原裝 貨期兩周
 詢價(jià)
NEC
24+
TO-251
65200
一級代理/放心采購
 詢價(jià)
RENESAS/瑞薩
21+
TO251
19000
只做正品原裝現(xiàn)貨
 詢價(jià)
RENESAS/瑞薩
22+
TO-251
20000
保證原裝正品,假一陪十
 詢價(jià)
NEC
22+
TO-251
8900
英瑞芯只做原裝正品!!!
 詢價(jià)
RENESAS/瑞薩
22+
TO-251
100000
代理渠道/只做原裝/可含稅
 詢價(jià)
NEC
24+
17+
10
TO-251
 詢價(jià)
更多2SK3113B供應(yīng)商 更新時(shí)間2025-1-28 16:30:00

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