首頁(yè) >2SC5200RTU>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
2SC5200RTU | NPN Epitaxial Silicon Transistor 1.HighCurrentCapability:IC=17A. 2.HighPowerDissipation:150watts. 3.HighFrequency:30MHz. 4.HighVoltage:VCEO=250V 5.WideS.O.Aforreliableoperation. 6.ExcellentGainLinearityforlowTHD. 7.Complementto2SA1943/FJL4215. | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
2SC5200RTU | Marking:C5200R;Package:TO-264;NPN Epitaxial Silicon Transistor Features ?HighCurrentCapability:IC=17A. ?HighPowerDissipation:150watts. ?HighFrequency:30MHz. ?HighVoltage:VCEO=250V ?WideS.O.Aforreliableoperation. ?ExcellentGainLinearityforlowTHD. ?Complementto2SA1943/FJL4215. ?ThermalandelectricalSpicemodelsareav | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
2SC5200RTU | 包裝:管件 封裝/外殼:TO-264-3,TO-264AA 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS NPN 250V 17A TO264-3 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=300V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=3.0V(Max)@IC=8A APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
NPNEpitaxialSiliconTransistor Features ?HighCurrentCapability:IC=17A. ?HighPowerDissipation:150watts. ?HighFrequency:30MHz. ?HighVoltage:VCEO=250V ?WideS.O.Aforreliableoperation. ?ExcellentGainLinearityforlowTHD. ?Complementto2SA1943/FJL4215. ?ThermalandelectricalSpicemodelsareav | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
HighpowerNPNepitaxialplanarbipolartransistor Description ThisdeviceisaNPNtransistormanufacturedusingnewBiT-LA(bipolartransistorforlinearamplifier)technology.Theresultingtransistorshowsgoodgainlinearitybehaviour. Features ■HighbreakdownvoltageVCEO=230V ■TypicalfT=30MHz Application ■Audiopoweramplif | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
SiliconNPNtransistorinaTO-3PPlasticPackage. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | FOSHAN | ||
SiliconNPNTripleDiffusedTransistor | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
150WattSiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PLpackage ·Complementtotype2SA1943 APPLICATIONS ·Highcurrentswitching ·Recommendedfor100Whighfidelityaudiofrequencyamplifieroutputstage | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司 | THINKISEMI | ||
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
TO-3PPlastic-EncapsulateTransistors | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司 | JIANGSU | ||
150WattSiliconEpitaxialPlanarNPNPowerTransistor | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司 | THINKISEMI | ||
POWERAMPLIFIERAPPLICATION ?Complementaryto2SA1943 ?Recommendedfor100WHighFidelityAudioFrequencyAmplifierOutputStage. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
PowerAmplifierApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
SiliconNPNPowerTransistors DESCRIPTION ?WithTO-3PLpackage ?Complementtotype2SA1943 APPLICATIONS ?Highcurrentswitching ?Recommendedfor100Whighfidelityaudio frequencyamplifieroutputstage | SAVANTIC Savantic, Inc. | SAVANTIC | ||
iscSiliconNPNPowerTransistor DESCRIPTION ·HighCurrentCapability ·HighPowerDissipation ·HighCollector-EmitterBreakdownVoltage- :V(BR)CEO=230V(Min) ·ComplementtoType2SA1943 APPLICATIONS ·Poweramplifierapplications ·Recommendfor100Whighfidelityaudiofrequencyamplifieroutputstage | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
NPNEpitaxialSiliconTransistor 1.HighCurrentCapability:IC=17A. 2.HighPowerDissipation:150watts. 3.HighFrequency:30MHz. 4.HighVoltage:VCEO=250V 5.WideS.O.Aforreliableoperation. 6.ExcellentGainLinearityforlowTHD. 7.Complementto2SA1943/FJL4215. | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
POWERAMPLIFIERAPPLICATIONS POWERAMPLIFIERAPPLICATIONS FEATURES *Recommendedfor100WHighFidelityAudioFrequency AmplifierOutputStage. *ComplementarytoUTC2SA1943 | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
POWERAMPLIFIERAPPLICATIONSDRIVERSTAGEAMPLIFIER | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
2SC5200RTU
- 制造商:
onsemi
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個(gè)
- 包裝:
管件
- 晶體管類型:
NPN
- 不同?Ib、Ic 時(shí)?Vce 飽和壓降(最大值):
3V @ 800mA,8A
- 電流 - 集電極截止(最大值):
5μA(ICBO)
- 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):
55 @ 1A,5V
- 頻率 - 躍遷:
30MHz
- 工作溫度:
-50°C ~ 150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-264-3,TO-264AA
- 供應(yīng)商器件封裝:
TO-264-3
- 描述:
TRANS NPN 250V 17A TO264-3
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
FAIRCHILD |
24+ |
TO3 |
4000 |
原裝原廠代理 可免費(fèi)送樣品 |
詢價(jià) | ||
Fairchild |
24+ |
TO-264 |
352 |
詢價(jià) | |||
Fairchild |
23+ |
TO-264 |
7750 |
全新原裝優(yōu)勢(shì) |
詢價(jià) | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
FAIRCHILD |
22+23+ |
TO-3PL |
37930 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
原廠 |
2020+ |
6 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | |||
FAIRCHILD/仙童 |
22+ |
TO-3PL |
29371 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | ||||
Fairchild |
1930+ |
N/A |
241 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物 |
詢價(jià) | ||
FAIRCHILD/仙童 |
2021+ |
TO-3PL |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) |
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