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2SC5242-O(Q)

包裝:管件 封裝/外殼:TO-3P-3,SC-65-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS NPN 230V 15A TO3P

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

2SC5242

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SC5242

NPNEpitaxialSiliconTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SC5242

SiliconNPNPowerTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2SC5242

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

2SC5242

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighCollectorBreakdownVoltage-:V(BR)CEO=230V(Min.) ·GoodLinearityofhFE ·ComplementtoType2SA1962 APPLICATIONS ·Poweramplifierapplications ·Recommendfor80Whighfidelityaudiofrequencyamplifieroutputstageapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SC5242

NPNEpitaxialSiliconTransistor

NPNEpitaxialSiliconTransistor Features ?HighCurrentCapability:IC=15A ?HighPowerDissipation:130watts ?HighFrequency:30MHz. ?HighVoltage:VCEO=230V ?WideS.O.Aforreliableoperation. ?ExcellentGainLinearityforlowTHD. ?Complementto2SA1962/FJA42

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2SC5242

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3P(I)package ·Complementtotype2SA1962 ·Highcollectorvoltage:VCEO=230V(Min) APPLICATIONS ·Poweramplifierapplications ·Recommendfor80Whighfidelityaudiofrequencyamplifieroutputstage

SAVANTIC

Savantic, Inc.

2SC5242

SiliconNPNTripleDiffusedTypePowerAmplifierApplications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SC5242

NPNTRIPLEDIFFUSED(FORPOWERAMPLIFIERAPLLICATIONS)

PowerAmplifierApplications ?HighCollectorbreakdownvoltage:VCEO=230V(min) ?Complementaryto2SA1962 ?Suitablefrousein80-Whighfidelityaudioamplifier’soutputstage

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SC5242OTU

NPNEpitaxialSiliconTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SC5242OTU

NPNEpitaxialSiliconTransistor

NPNEpitaxialSiliconTransistor Features ?HighCurrentCapability:IC=15A ?HighPowerDissipation:130watts ?HighFrequency:30MHz. ?HighVoltage:VCEO=230V ?WideS.O.Aforreliableoperation. ?ExcellentGainLinearityforlowTHD. ?Complementto2SA1962/FJA42

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2SC5242RTU

NPNEpitaxialSiliconTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SC5242RTU

NPNEpitaxialSiliconTransistor

NPNEpitaxialSiliconTransistor Features ?HighCurrentCapability:IC=15A ?HighPowerDissipation:130watts ?HighFrequency:30MHz. ?HighVoltage:VCEO=230V ?WideS.O.Aforreliableoperation. ?ExcellentGainLinearityforlowTHD. ?Complementto2SA1962/FJA42

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    2SC5242-O(Q)

  • 制造商:

    Toshiba Semiconductor and Storage

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個(gè)

  • 包裝:

    管件

  • 晶體管類型:

    NPN

  • 不同?Ib、Ic 時(shí)?Vce 飽和壓降(最大值):

    3V @ 800mA,8A

  • 電流 - 集電極截止(最大值):

    5μA(ICBO)

  • 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):

    80 @ 1A,5V

  • 頻率 - 躍遷:

    30MHz

  • 工作溫度:

    150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-3P-3,SC-65-3

  • 供應(yīng)商器件封裝:

    TO-3P(N)

  • 描述:

    TRANS NPN 230V 15A TO3P

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
Toshiba
24+
2-16C1A(TO-247N)
11310
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全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
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24+
N/A
62000
一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
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Toshiba Semiconductor and Stor
24+
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TOSHIBA/東芝
22+
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TOSHIBA
22+
TO-3P
8900
英瑞芯只做原裝正品!!!
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FAIRCHILD
21+
TO-3P
305
原裝現(xiàn)貨假一賠十
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FAIRCHILD
1922+
TO-3P
224
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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FAIRCHILD
23+
TO-3P
305
全新原裝正品現(xiàn)貨,支持訂貨
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更多2SC5242-O(Q)供應(yīng)商 更新時(shí)間2024-12-27 16:30:00