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ZXTP19060CZTA

60V PNP medium transistor

Description PackagedintheSOT89outlinethisnewlowsaturationPNPtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features ?Highgain ?Lowsaturationvoltage ?Highpeakcurrent ?7Vreverseb

Zetex

Zetex Semiconductors

ZXTP19060CZTA

60V PNP medium transistor in SOT89

Description PackagedinSOT89outline,thislow-saturationPNPtransistoroffersextremelylowon-statelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features ?BVCEO>-60V ?BVECO>-7V ?IC=-4.5HighContinuousCollectorCurrent ?I

DIODES

Diodes Incorporated

ZXTP19060CZTA

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：TO-243AA 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) 描述：TRANS PNP 60V 4.5A SOT89-3

PAMDiodes Incorporated

龍鼎威

AGR19060E

60W,1930MHz-1990MHz,PCSLDMOSRFPowerTransistor

Introduction TheAGR19060Eisa60W,28VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforpersonalcommunicationservice(PCS)(1930MHz—1990MHz),globalsystemformobilecommunication(GSM/EDGE),time-divisionmultipleaccess

TriQuint

TriQuint Semiconductor

AGR19060EF

60W,1930MHz-1990MHz,PCSLDMOSRFPowerTransistor

Introduction TheAGR19060Eisa60W,28VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforpersonalcommunicationservice(PCS)(1930MHz—1990MHz),globalsystemformobilecommunication(GSM/EDGE),time-divisionmultipleaccess

TriQuint

TriQuint Semiconductor

AGR19060EU

60W,1930MHz-1990MHz,PCSLDMOSRFPowerTransistor

Introduction TheAGR19060Eisa60W,28VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforpersonalcommunicationservice(PCS)(1930MHz—1990MHz),globalsystemformobilecommunication(GSM/EDGE),time-divisionmultipleaccess

TriQuint

TriQuint Semiconductor

LET19060C

RFPOWERTRANSISTORSLdmosEnhancedTechnology

DESCRIPTION TheLET19060CisacommonsourceN-Channelenhancement-modelateralField-EffectRFpowertransistordesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1.0GHz.TheLET19060Cisdesignedforhighgainandbroadbandperformanceoperatingincommonsource

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

MRF19060

RFPOWERFIELDEFFECTTRANSISTORS

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.9to2.0GHz.SuitableforCDMA,TDMA,GSMandmulticarrieramplifierapplications. ?TypicalCDMAPerformance:1960MHz,2

Motorola

Motorola, Inc

MRF19060

RFPowerFieldEffectTransistors

RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1900to2000MHz.SuitableforCDMA,TDMA,GSMandmulticarrieramplifierapplications. ?TypicalCDMAPerformance:1960MHz,26VoltsIS-95CDMA

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

ZXTN19060CFF

60V,SOT23F,NPNhighgainpowertransistor

Description ThismidvoltageNPNtransistorhasbeendesignedforapplicationsrequiringhighgainandlowsaturationvoltage.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisof

Zetex

Zetex Semiconductors

ZXTN19060CFF

60VNPNHIGHGAINPOWERTRANSISTOR

Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance Featu

DIODES

Diodes Incorporated

ZXTN19060CFFTA

60VNPNHIGHGAINPOWERTRANSISTOR

Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance Featu

DIODES

Diodes Incorporated

ZXTN19060CFFTA

60V,SOT23F,NPNhighgainpowertransistor

Description ThismidvoltageNPNtransistorhasbeendesignedforapplicationsrequiringhighgainandlowsaturationvoltage.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisof

Zetex

Zetex Semiconductors

ZXTN19060CG

60VNPNlowsatmediumpowertransistor

Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features ?HigherpowerdissipationSOT223package ?Highpeakcurrent ?Lowsat

Zetex

Zetex Semiconductors

ZXTN19060CG

60VNPNlowsatmediumpowertransistorinSOT223

Features ?BVCEO>60V ?IC=7AContinuousCollectorCurrent ?ICM=12APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

ZXTN19060CGTA

60VNPNMEDIUMPOWERLOWSATURATIONTRANSISTOR

DIODES

Diodes Incorporated

ZXTN19060CGTA

60VNPNlowsatmediumpowertransistorinSOT223

Features ?BVCEO>60V ?IC=7AContinuousCollectorCurrent ?ICM=12APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

ZXTN19060CGTA

60VNPNlowsatmediumpowertransistor

Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features ?HigherpowerdissipationSOT223package ?Highpeakcurrent ?Lowsat

Zetex

Zetex Semiconductors

ZXTP19060C

60VPNPmediumtransistor

Description PackagedintheSOT223outlinethisnewlowsaturationPNPtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features ?HighGain ?Lowsaturationvoltage ?Highpeakcurrent ?7Vreverse

Zetex

Zetex Semiconductors

ZXTP19060CFF

60V,SOT23F,PNPmediumpowertransistor

Description ThismediumvoltagePNPtransistorisdesignedforapplicationsrequiringhigh-gainandlow-saturationvoltage.TheSOT23FpackageisPINcompatiblewiththeindustrystandardSOT23footprintwhileofferingalowerprofileandhigherpowerdissipationforapplicationswherepowerdens

DIODES

Diodes Incorporated

產(chǎn)品屬性

  • 產(chǎn)品編號：

    ZXTP19060CZTA

  • 制造商：

    Diodes Incorporated

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個(gè)

  • 包裝：

    卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶

  • 晶體管類型：

    PNP

  • 不同?Ib、Ic 時(shí)?Vce 飽和壓降（最大值）：

    410mV @ 450mA，4.5A

  • 電流 - 集電極截止（最大值）：

    50nA（ICBO）

  • 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)（最小值）：

    200 @ 100mA，2V

  • 頻率 - 躍遷：

    180MHz

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    TO-243AA

  • 供應(yīng)商器件封裝：

    SOT-89-3

  • 描述：

    TRANS PNP 60V 4.5A SOT89-3

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
Diodes Incorporated
24+
TO-243AA
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
ZETEX/DIODES
SOT-89
30216
原裝 原裝 原裝 只做原裝現(xiàn)貨
 詢價(jià)
DIODES/美臺
2019+
SOT89
78550
原廠渠道 可含稅出貨
 詢價(jià)
DIODES/美臺
24+
SOT-89
2000
只做原廠渠道 可追溯貨源
 詢價(jià)
DIODES/美臺
20+
SOT-89
120000
原裝正品 可含稅交易
 詢價(jià)
DIODES(美臺)
23+
SOT-89
8498
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
DIODES/美臺
23+
SOT-89
100586
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
 詢價(jià)
ZetexInc
24+
SOT-89
7500
詢價(jià)
DiodesZetex
18+
NA
3072
進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190
 詢價(jià)
DIODES/ZETEX
23+
原廠封裝
13528
振宏微原裝正品,假一罰百
 詢價(jià)
更多ZXTP19060CZTA供應(yīng)商 更新時(shí)間2024-10-25 21:12:00

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