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LET19060C

RF POWER TRANSISTORS Ldmos Enhanced Technology

DESCRIPTION TheLET19060CisacommonsourceN-Channelenhancement-modelateralField-EffectRFpowertransistordesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1.0GHz.TheLET19060Cisdesignedforhighgainandbroadbandperformanceoperatingincommonsource

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MRF19060

RFPOWERFIELDEFFECTTRANSISTORS

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.9to2.0GHz.SuitableforCDMA,TDMA,GSMandmulticarrieramplifierapplications. ?TypicalCDMAPerformance:1960MHz,2

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF19060

RFPowerFieldEffectTransistors

RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1900to2000MHz.SuitableforCDMA,TDMA,GSMandmulticarrieramplifierapplications. ?TypicalCDMAPerformance:1960MHz,26VoltsIS-95CDMA

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

ZXTN19060CFF

60V,SOT23F,NPNhighgainpowertransistor

Description ThismidvoltageNPNtransistorhasbeendesignedforapplicationsrequiringhighgainandlowsaturationvoltage.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisof

Zetex

Zetex Semiconductors

ZXTN19060CFF

60VNPNHIGHGAINPOWERTRANSISTOR

Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance Featu

DIODES

Diodes Incorporated

ZXTN19060CFFTA

60VNPNHIGHGAINPOWERTRANSISTOR

Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance Featu

DIODES

Diodes Incorporated

ZXTN19060CFFTA

60V,SOT23F,NPNhighgainpowertransistor

Description ThismidvoltageNPNtransistorhasbeendesignedforapplicationsrequiringhighgainandlowsaturationvoltage.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisof

Zetex

Zetex Semiconductors

ZXTN19060CG

60VNPNlowsatmediumpowertransistor

Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features ?HigherpowerdissipationSOT223package ?Highpeakcurrent ?Lowsat

Zetex

Zetex Semiconductors

ZXTN19060CG

60VNPNlowsatmediumpowertransistorinSOT223

Features ?BVCEO>60V ?IC=7AContinuousCollectorCurrent ?ICM=12APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

ZXTN19060CGTA

60VNPNMEDIUMPOWERLOWSATURATIONTRANSISTOR

DIODES

Diodes Incorporated

詳細(xì)參數(shù)

  • 型號：

    LET19060C

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱：

    STMicroelectronics

  • 功能描述：

    RF POWER TRANSISTORS Ldmos Enhanced Technology

供應(yīng)商型號品牌批號封裝庫存備注價格
STM
1809+
M243
96
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價
22+
NA
43
加我QQ或微信咨詢更多詳細(xì)信息,
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ST
22+
M243
9000
原廠渠道,現(xiàn)貨配單
 詢價
ST
23+
M243
9000
原裝正品，支持實(shí)單
 詢價
ST/意法
22+
N
30000
十七年VIP會員,誠信經(jīng)營，一手貨源，原裝正品可零售！
 詢價
STMicroelectronics
2022+
M243
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價
STM
23+
M243
33500
原裝正品現(xiàn)貨庫存QQ:2987726803
 詢價
ST/意法
22+
N
28000
原裝現(xiàn)貨只有原裝.假一罰十
 詢價
ST
2024+
M243
16000
原裝優(yōu)勢絕對有貨
 詢價
24+
N/A
57000
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇
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更多LET19060C供應(yīng)商 更新時間2021-9-14 10:50:00

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