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VN2460

N-Channel Enhancement-Mode Vertical DMOS FETs

AdvancedDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehigh

SUTEX

Supertex, Inc

VN2460

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN2460

N-Channel Enhancement-Mode Vertical DMOS FET

SUTEX

Supertex, Inc

VN2460N3

N-Channel Enhancement-Mode Vertical DMOS FETs

AdvancedDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehigh

SUTEX

Supertex, Inc

VN2460N3

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN2460N3-G

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN2460N3-P002

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN2460N3-P002-G

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN2460N3-P003

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN2460N3-P003-G

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN2460N3-P013

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN2460N3-P013-G

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN2460N3-P014

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN2460N3-P014-G

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN2460N8

N-Channel Enhancement-Mode Vertical DMOS FETs

AdvancedDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehigh

SUTEX

Supertex, Inc

VN2460N8-G

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN2460N8VN2460N3-G

N-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedancean

SUTEX

Supertex, Inc

VN2460NW

N-Channel Enhancement-Mode Vertical DMOS FETs

AdvancedDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehigh

SUTEX

Supertex, Inc

VN2460_13

N-Channel Enhancement-Mode Vertical DMOS FET

SUTEX

Supertex, Inc

VN2460N3-G

N-Channel Enhancement-Mode Vertical DMOS FET

SUTEX

Supertex, Inc

詳細(xì)參數(shù)

  • 型號(hào):

    VN2460

  • 功能描述:

    MOSFET 600V 20Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SILICONIX
24+
SOT-23
1500
詢價(jià)
SUPERTEX
2020+
SOT-89
6500
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢價(jià)
Superte
23+
TO-92
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
詢價(jià)
SUPERTEX
1836+
SOT-89
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價(jià)
SUPERTEX
23+
SOT89
999999
原裝正品現(xiàn)貨量大可訂貨
詢價(jià)
MICROCHIP/微芯
18+
SOT89-3
32953
全新原裝現(xiàn)貨,可出樣品,可開增值稅發(fā)票
詢價(jià)
SUPERTEX
19+
SOT89
20000
1800
詢價(jià)
SUPERTEX
23+
SOT89
20000
原廠原裝正品現(xiàn)貨
詢價(jià)
SUPERTE
20+
SOT89
19570
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
詢價(jià)
SUPERTE
2020+
SOT89
8000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
更多VN2460供應(yīng)商 更新時(shí)間2024-11-17 10:20:00