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VN2460N8VN2460N3-G中文資料SUTEX數(shù)據(jù)手冊PDF規(guī)格書

VN2460N8VN2460N3-G
廠商型號(hào)

VN2460N8VN2460N3-G

功能描述

N-Channel Enhancement-Mode Vertical DMOS FETs

文件大小

565.25 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 Supertex, Inc
企業(yè)簡稱

SUTEX

中文名稱

Supertex, Inc官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-12 12:17:00

VN2460N8VN2460N3-G規(guī)格書詳情

General Description

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.

Features

? Free from secondary breakdown

? Low power drive requirement

? Ease of paralleling

? Low CISS and fast switching speeds

? Excellent thermal stability

? Integral source-drain diode

? High input impedance and high gain

Applications

? Motor controls

? Converters, amplifiers, and switches

? Power supply circuits

? Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

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