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VI20120S

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,per ??JESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandin ??accordancetoWEEE2002/96/EC ?Haloge

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20120S

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20120S

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20120S

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20120S

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20120S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD2

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20120S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20120S-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,per ??JESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandin ??accordancetoWEEE2002/96/EC ?Haloge

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20120S-E3SLASH4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,per ??JESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandin ??accordancetoWEEE2002/96/EC ?Haloge

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

UltraLowVF=0.54VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    VI20120S

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
VISHAY
23+
TO-262
8600
全新原裝現(xiàn)貨
 詢價(jià)
VISHAY/威世
23+
TO-262
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價(jià)
Vishay/GeneralSemiconduc
24+
TO-262AA
620
詢價(jià)
VISHAY
1735+
TO262AA
6528
科恒偉業(yè)!只做原裝正品!假一賠十!
 詢價(jià)
VISHAY
23+
TO262AA
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
VISHAY原裝
22+23+
TO-262
24164
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
VISHAY原裝
24+
TO-262
9860
一級代理
 詢價(jià)
VISHAY
2020+
TO-262
8000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
VISHAY
21+
TO-262
50
原裝現(xiàn)貨假一賠十
 詢價(jià)
VISHAY
1809+
TO-262
3675
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
更多VI20120S供應(yīng)商 更新時(shí)間2025-2-26 16:04:00

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