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VB30100C-E3

Trench MOS Schottky technology

UltraLowVF=0.455VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbatht

VishayVishay Siliconix

威世科技威世科技半導體

VB30100C-E3

Dual High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) ?Lowthermalresistance ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106

VishayVishay Siliconix

威世科技威世科技半導體

VB30100C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VB30100C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

UltraLowVF=0.455VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective

VishayVishay Siliconix

威世科技威世科技半導體

VB30100C-E3/8W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

UltraLowVF=0.455VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective

VishayVishay Siliconix

威世科技威世科技半導體

VB30100C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

UltraLowVF=0.455VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective

VishayVishay Siliconix

威世科技威世科技半導體

VB30100C-E3SLASH8W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

UltraLowVF=0.455VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective

VishayVishay Siliconix

威世科技威世科技半導體

VB30100C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VB30100C-E3/8W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VB30100C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號:

    VB30100C-E3

  • 功能描述:

    肖特基二極管與整流器 30 Amp 100 Volt Dual TrenchMOS

  • RoHS:

  • 制造商:

    Skyworks Solutions, Inc.

  • 產(chǎn)品:

    Schottky Diodes

  • 峰值反向電壓:

    2 V

  • 正向連續(xù)電流:

    50 mA

  • 配置:

    Crossover Quad

  • 正向電壓下降:

    370 mV

  • 最大功率耗散:

    75 mW

  • 工作溫度范圍:

    - 65 C to + 150 C

  • 安裝風格:

    SMD/SMT

  • 封裝/箱體:

    SOT-143

  • 封裝:

    Reel

供應商型號品牌批號封裝庫存備注價格
VISHAY/威世
2447
TO-263
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
VIS
22+
TO-263AB
6000
十年配單,只做原裝
詢價
VIS
23+
TO-263AB
6000
原裝正品,支持實單
詢價
VISHAY/威世
22+
TO-263
100000
代理渠道/只做原裝/可含稅
詢價
VIS
22+
TO-263AB
25000
只做原裝進口現(xiàn)貨,專注配單
詢價
VIS
25+
TO-263AB
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
VISHAY/威世
2406+
TO263
3668
優(yōu)勢代理渠道 原裝現(xiàn)貨 可全系列訂貨
詢價
Vishay
24+
NA
3000
進口原裝正品優(yōu)勢供應
詢價
VISHAY
1822+
TO263
9852
只做原裝正品假一賠十為客戶做到零風險!!
詢價
VISHAY/威世
22+
TO263
22150
原裝正品現(xiàn)貨
詢價
更多VB30100C-E3供應商 更新時間2025-5-9 11:00:00