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UPA862TD

NPN Silicon RF Twin Transistor with 2 Different Elements

FEATURES ?Lowvoltageoperation ?2differentbuilt-intransistors(2SC5010,2SC5801) Q1:Built-inhighgaintransistor fT=12.0GHzTYP.,?S21e?2=8.5dBTYP.@VCE=3V,IC=10mA,f=2GHz Q2:Built-inlowphasedistortiontransistorsuitedforOSCoperation fT=4

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA862TD

NECs NPN SILICON RF TWIN TRANSISTOR

DESCRIPTION NECsUPA862TDcontainsoneNE851andoneNE685NPNhighfrequencysiliconbipolarchip.TheNE851isanexcellentoscillatorchip,featuringlow1/fnoiseandhighimmunitytopushingeffects.TheNE685isanexcellentbuffertransistor,featuringlownoiseandhighgain.NECsnewult

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA862TD

NPN SILICON RF TWIN TRANSISTOR

CEL

California Eastern Labs

UPA862TD-A

NPN Silicon RF Twin Transistor with 2 Different Elements

FEATURES ?Lowvoltageoperation ?2differentbuilt-intransistors(2SC5010,2SC5801) Q1:Built-inhighgaintransistor fT=12.0GHzTYP.,?S21e?2=8.5dBTYP.@VCE=3V,IC=10mA,f=2GHz Q2:Built-inlowphasedistortiontransistorsuitedforOSCoperation fT=4

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA862TD-T3

NECs NPN SILICON RF TWIN TRANSISTOR

DESCRIPTION NECsUPA862TDcontainsoneNE851andoneNE685NPNhighfrequencysiliconbipolarchip.TheNE851isanexcellentoscillatorchip,featuringlow1/fnoiseandhighimmunitytopushingeffects.TheNE685isanexcellentbuffertransistor,featuringlownoiseandhighgain.NECsnewult

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA862TD-T3

NPN Silicon RF Twin Transistor with 2 Different Elements

FEATURES ?Lowvoltageoperation ?2differentbuilt-intransistors(2SC5010,2SC5801) Q1:Built-inhighgaintransistor fT=12.0GHzTYP.,?S21e?2=8.5dBTYP.@VCE=3V,IC=10mA,f=2GHz Q2:Built-inlowphasedistortiontransistorsuitedforOSCoperation fT=4

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA862TD-T3-A

NPN Silicon RF Twin Transistor with 2 Different Elements

FEATURES ?Lowvoltageoperation ?2differentbuilt-intransistors(2SC5010,2SC5801) Q1:Built-inhighgaintransistor fT=12.0GHzTYP.,?S21e?2=8.5dBTYP.@VCE=3V,IC=10mA,f=2GHz Q2:Built-inlowphasedistortiontransistorsuitedforOSCoperation fT=4

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA862TD-T3-A

NPN SILICON RF TWIN TRANSISTOR

CEL

California Eastern Labs

UPA862TS

NPNSILICONRFTWINTRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINSUPERLEAD-LESSMINIMOLD FEATURES ?Lowvoltageoperation ?2differentbuilt-intransistors(2SC5435,2SC5800) Q1:Built-inhighgaintransistor fT=12.0GHzTYP.,?S21e?2=11.0dBTYP.@VCE=3V,IC=10mA,f=2GHz

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

XCSPL862

safetyswitchXCSPL-straightlever-torightortoleft-1NC2NO-M16

SCHNEIDERSchneider Electric

施耐德施耐德電氣

詳細(xì)參數(shù)

  • 型號(hào)：

    UPA862TD

  • 功能描述：

    射頻雙極小信號(hào)晶體管 NPN Silicon RF Twin

  • RoHS：

    否

  • 制造商：

    NXP Semiconductors

  • 配置：

    Single

  • 晶體管極性：

    NPN

  • 最大工作頻率：

    7000 MHz 集電極—發(fā)射極最大電壓

  • VCEO：

    15 V 發(fā)射極 - 基極電壓

  • VEBO：

    2 V

  • 集電極連續(xù)電流：

    0.15 A

  • 功率耗散：

    1000 mW 直流集電極/Base Gain hfe

  • 最大工作溫度：

    + 150 C

  • 封裝/箱體：

    SOT-223

  • 封裝：

    Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
24+
SOT-563
8000
新進(jìn)庫(kù)存/原裝
 詢(xún)價(jià)
CEL
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢(xún)價(jià)
NEC
2022
SOT-563
8000
全新原裝現(xiàn)貨熱賣(mài)
 詢(xún)價(jià)
NEC
24+
SOD523
2600
原裝現(xiàn)貨假一賠十
 詢(xún)價(jià)
NEC
23+
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
 詢(xún)價(jià)
NEC
23+
SOT56PB
8890
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢(xún)
 詢(xún)價(jià)
CEL
24+
原廠原封
1000
原裝正品
 詢(xún)價(jià)
NEC
2016+
SOT-563
9000
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
 詢(xún)價(jià)
NEC
23+
SOT563
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)!
 詢(xún)價(jià)
SOT-563
23+
NA
15659
振宏微專(zhuān)業(yè)只做正品,假一罰百!
 詢(xún)價(jià)
更多UPA862TD供應(yīng)商 更新時(shí)間2025-3-12 16:00:00

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