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TPD4105K

High Voltage Monolithic Silicon Power IC

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

4105

RelampableSocket

VCC

Visual Communications Company

ACTR4105

trueone-port,surface-acoustic-wave(SAW)resonator

ACT

Advanced Crystal Technology

AN4105

DesignConsiderationsforSwitchedModePowerSuppliesUsingAFairchildPowerSwitch(FPS)inaFlybackConverter

Introduction Flybackswitchedmodepowersupplies(SMPS)areamongthemostfrequentlyusedpowercircuitsinhouseholdandconsumerelectronics.ThebasicfunctionofanSMPSistosupplyregulatedpowertotheloadonthesecondary,oroutputside.AnSMPStypicallyincorporatesapowertransfo

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

AUIRFR4105

AdvancedPlanarTechnologyLowOn-Resistance

IRF

International Rectifier

AUIRFR4105

AdvancedPlanarTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

AUIRFR4105

AdvancedPlanarTechnology

AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesign

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRFR4105TR

AdvancedPlanarTechnologyLowOn-Resistance

IRF

International Rectifier

AUIRFR4105TRL

AdvancedPlanarTechnologyLowOn-Resistance

IRF

International Rectifier

AUIRFR4105TRR

AdvancedPlanarTechnologyLowOn-Resistance

IRF

International Rectifier

AUIRFR4105Z

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFR4105Z

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive

KERSEMI

Kersemi Electronic Co., Ltd.

AUIRFR4105Z

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRFR4105ZTR

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFR4105ZTRL

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFR4105ZTRL

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRFR4105ZTRR

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFU4105Z

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFU4105Z

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive

KERSEMI

Kersemi Electronic Co., Ltd.

AUIRFU4105Z

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    TPD4105K

  • 制造商:

    TOSHIBA

  • 制造商全稱(chēng):

    Toshiba Semiconductor

  • 功能描述:

    High Voltage Monolithic Silicon Power IC

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TOSHIBA
1844+
NA
9852
只做原裝正品假一賠十為客戶(hù)做到零風(fēng)險(xiǎn)!!
詢(xún)價(jià)
TOSHIBA
23+
ZIP-23
2000
一級(jí)代理原裝現(xiàn)貨。
詢(xún)價(jià)
TOSHIBA/東芝
23+
ZIP-23
90000
只做原廠(chǎng)渠道價(jià)格優(yōu)勢(shì)可提供技術(shù)支持
詢(xún)價(jià)
TOSHIBA/東芝
19+
ZIP-23
1000
進(jìn)口原裝現(xiàn)貨假一賠萬(wàn)力挺實(shí)單
詢(xún)價(jià)
TOSHIBA
22+23+
ZIP-23
19735
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢(xún)價(jià)
只做原裝
21+
36520
一級(jí)代理/放心采購(gòu)
詢(xún)價(jià)
TOSHIBA/東芝
21+
ZIP-23
1195
原裝現(xiàn)貨假一賠十
詢(xún)價(jià)
TOSHIBA/東芝
22+
ZIP-23
28600
只做原裝正品現(xiàn)貨假一賠十一級(jí)代理
詢(xún)價(jià)
TOSHIBA/東芝
23+
NA
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢(xún)價(jià)
TOSHIBA
ZIP-23
22+
6000
十年配單,只做原裝
詢(xún)價(jià)
更多TPD4105K供應(yīng)商 更新時(shí)間2024-10-25 17:11:00