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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
ACTR4105	文件：58.89 Kbytes Page：3 Pages	true one-port, surface-acoustic-wave (SAW) resonator	ACT Advanced Crystal Technology	ACT
ACTR4105/303.825/QCC8C	文件：58.89 Kbytes Page：3 Pages	true one-port, surface-acoustic-wave (SAW) resonator	ACT Advanced Crystal Technology	ACT
AN4105	文件：368.51 Kbytes Page：22 Pages	DesignConsiderationsforSwitchedModePowerSuppliesUsingAFairchildPowerSwitch(FPS)inaFlybackConverter Introduction Flybackswitchedmodepowersupplies(SMPS)areamongthemostfrequentlyusedpowercircuitsinhouseholdandconsumerelectronics.ThebasicfunctionofanSMPSistosupplyregulatedpowertotheloadonthesecondary,oroutputside.AnSMPStypicallyincorporatesapowertransfo	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
AUIRFR4105	文件：244.23 Kbytes Page：12 Pages	AdvancedPlanarTechnologyLowOn-Resistance	IRF International Rectifier	IRF
AUIRFR4105	文件：4.78457 Mbytes Page：10 Pages	AdvancedPlanarTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
AUIRFR4105	文件：441.74 Kbytes Page：10 Pages	AdvancedPlanarTechnology AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesign	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
AUIRFR4105TR	文件：244.23 Kbytes Page：12 Pages	AdvancedPlanarTechnologyLowOn-Resistance	IRF International Rectifier	IRF
AUIRFR4105TRL	文件：244.23 Kbytes Page：12 Pages	AdvancedPlanarTechnologyLowOn-Resistance	IRF International Rectifier	IRF
AUIRFR4105TRR	文件：244.23 Kbytes Page：12 Pages	AdvancedPlanarTechnologyLowOn-Resistance	IRF International Rectifier	IRF
AUIRFR4105Z	文件：323.57 Kbytes Page：14 Pages	HEXFET?PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	IRF International Rectifier	IRF
AUIRFR4105Z	文件：4.67522 Mbytes Page：12 Pages	AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
AUIRFR4105Z	文件：726.28 Kbytes Page：12 Pages	AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
AUIRFR4105ZTR	文件：323.57 Kbytes Page：14 Pages	HEXFET?PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	IRF International Rectifier	IRF
AUIRFR4105ZTRL	文件：323.57 Kbytes Page：14 Pages	HEXFET?PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	IRF International Rectifier	IRF
AUIRFR4105ZTRL	文件：726.28 Kbytes Page：12 Pages	AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
AUIRFR4105ZTRR	文件：323.57 Kbytes Page：14 Pages	HEXFET?PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	IRF International Rectifier	IRF
AUIRFU4105Z	文件：323.57 Kbytes Page：14 Pages	HEXFET?PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	IRF International Rectifier	IRF
AUIRFU4105Z	文件：4.67522 Mbytes Page：12 Pages	AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
AUIRFU4105Z	文件：726.28 Kbytes Page：12 Pages	AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
C4105A	文件：73.96 Kbytes Page：1 Pages	7C227/30TCPVCPVCCOMMUNICATIONCABLE	GENERALGeneral Cable Technologies Corporation 通用電氣公司美國(guó)通用電氣公司	GENERAL

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型號(hào)：
ACTR4105
制造商：
ACT
制造商全稱(chēng)：
Advanced Crystal Technology
功能描述：
true one-port, surface-acoustic-wave(SAW) resonator

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市永貝爾科技有限公司	ACTR4105	ACT	23+	原廠原包	19960	只做進(jìn)口原裝終端工廠免費(fèi)送樣	詢價(jià)

更多ACTR4105供應(yīng)商更新時(shí)間2025-1-13 18:57:00

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