首頁>TP65H300G4LSGB-TR>規(guī)格書詳情
TP65H300G4LSGB-TR中文資料TRANSPHORM數(shù)據(jù)手冊PDF規(guī)格書
TP65H300G4LSGB-TR規(guī)格書詳情
Description
The TP65H300G4LSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
The Gen IV SuperGaN? platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
Features
? Gen IV technology
? JEDEC-qualified GaN technology
? Dynamic RDS(on)eff production tested
? Robust design, defined by
— Wide gate safety margin
— Transient over-voltage capability
? Very low QRR
? Reduced crossover loss
? RoHS compliant and Halogen-free packaging
Applications
? Consumer
? Power adapters
? Low power SMPS
? Lighting
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TOPRO |
23+ |
QFP208 |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價(jià) | ||
24+ |
N/A |
54000 |
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
TOPRO |
09+ |
QFP |
5500 |
原裝無鉛,優(yōu)勢熱賣 |
詢價(jià) | ||
TP |
23+ |
SOP-20 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
TOPRO |
1822+ |
QFP |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價(jià) | ||
TOPRO |
16+ |
QFP |
1052 |
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢! |
詢價(jià) | ||
TOPRO |
24+ |
QFP |
2789 |
全新原裝自家現(xiàn)貨!價(jià)格優(yōu)勢! |
詢價(jià) | ||
TP |
2023+ |
SOP-20 |
3685 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價(jià) | ||
TOPRO |
2018+ |
393625 |
電源IC原裝正品有優(yōu)勢 |
詢價(jià) | |||
TOPRO |
2020+ |
原廠封裝 |
350000 |
100%進(jìn)口原裝正品公司現(xiàn)貨庫存 |
詢價(jià) |
