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TP65H070LSG-TR中文資料TRANSPHORM數(shù)據(jù)手冊(cè)PDF規(guī)格書

TP65H070LSG-TR
廠商型號(hào)

TP65H070LSG-TR

功能描述

650V GaN FET PQFN Series

文件大小

1.17705 Mbytes

頁(yè)面數(shù)量

13 頁(yè)

生產(chǎn)廠商 Transphorm
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中文名稱

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更新時(shí)間

2025-1-15 11:10:00

TP65H070LSG-TR規(guī)格書詳情

Description

The TP65H070L Series 650V, 72mΩ Gallium Nitride (GaN)

FET are normally-off devices. They combine state-of-the-art

high voltage GaN HEMT and low voltage silicon MOSFET

technologies—offering superior reliability and performance.

Features

? JEDEC qualified GaN technology

? Dynamic RDS(on)eff production tested

? Robust design, defined by

— Intrinsic lifetime tests

— Wide gate safety margin

— Transient over-voltage capability

? Very low QRR

? Reduced crossover loss

? RoHS compliant and Halogen-free packaging

Benefits

? Improves efficiency/operation frequencies over Si

? Enables AC-DC bridgeless totem-pole PFC designs

— Increased power density

— Reduced system size and weight

— Overall lower system cost

? Easy to drive with commonly-used gate drivers

? GSD pin layout improves high speed design

Applications

? Datacom

? Broad industrial

? PV inverter

? Servo motor

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