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TP65H150G4LSG中文資料TRANSPHORM數(shù)據(jù)手冊PDF規(guī)格書

TP65H150G4LSG
廠商型號

TP65H150G4LSG

功能描述

650V SuperGaN GaN FET in PQFN (source tab)

文件大小

1.06533 Mbytes

頁面數(shù)量

12

生產(chǎn)廠商 Transphorm
企業(yè)簡稱

TRANSPHORM

中文名稱

Transphorm官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-11-8 15:36:00

TP65H150G4LSG規(guī)格書詳情

Description

The TP65H150G4LSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

The Gen IV SuperGaN? platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.

Features

? Gen IV technology

? JEDEC-qualified GaN technology

? Dynamic RDS(on)eff production tested

? Robust design, defined by

— Wide gate safety margin

— Transient over-voltage capability

? Very low QRR

? Reduced crossover loss

? RoHS compliant and Halogen-free packaging

Applications

? Consumer

? Power adapters

? Low power SMPS

? Lighting

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