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TN2510

N-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe

SUTEX

Supertex, Inc

TN2510

N-Channel Enhancement-Mode Vertical DMOS FET

GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputi

SUTEX

Supertex, Inc

TN2510

N-Channel Enhancement-Mode Vertical DMOS FET

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

TN2510N8

N-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe

SUTEX

Supertex, Inc

TN2510N8-G

N-Channel Enhancement-Mode Vertical DMOS FET

GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputi

SUTEX

Supertex, Inc

TN2510ND

N-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe

SUTEX

Supertex, Inc

TN2510N8-G

N-Channel Enhancement-Mode Vertical DMOS FET

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

TP2510

LowThresholdP-ChannelEnhancementModeVerticalDMOSFETs

SUTEX

Supertex, Inc

TP2510

P-ChannelEnhancement-ModeVerticalDMOSFETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswellprovensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththeh

SUTEX

Supertex, Inc

TP2510ND

P-ChannelEnhancement-ModeVerticalDMOSFETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswellprovensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththeh

SUTEX

Supertex, Inc

TP2510ND

LowThresholdP-ChannelEnhancementModeVerticalDMOSFETs

SUTEX

Supertex, Inc

TRQ2510HXXXS

TRQSERIES-PFCCHOKES

FRONTIER

Frontier Electronics

TZ2510A

CrystalUnitSMD2.0x1.627.12MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.0mmx1.6mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

U2510B

All-BandAM/FMReceiverandAudioAmplifier

Description TheU2510Bisanintegratedbipolarone-chipAM/FMradiocircuit.ItcontainsanFMfrontendwithpreamplifier,FMIFanddemodulator,acompleteAMreceiver,anAFamplifierandamodeswitchforAM,FMandtape.Thiscircuitisdesignedforclockradiosandportableradio-cassette

Temic

TEMIC Semiconductors

U2510B

All-BandAM/FMReceiverandAudioAmplifier

Description TheU2510Bisanintegratedbipolarone-chipAM/FMradiocircuit.ItcontainsanFMfrontendwithpreamplifier,FMIFanddemodulator,acompleteAMreceiver,anAFamplifierandamodeswitchforAM,FMandtape.Thiscircuitisdesignedforclockradiosandportableradio-cassette

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

U2510B-M

All-BandAM/FMReceiverandAudioAmplifier

Description TheU2510Bisanintegratedbipolarone-chipAM/FMradiocircuit.ItcontainsanFMfrontendwithpreamplifier,FMIFanddemodulator,acompleteAMreceiver,anAFamplifierandamodeswitchforAM,FMandtape.Thiscircuitisdesignedforclockradiosandportableradio-cassette

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

U2510B-M

All-BandAM/FMReceiverandAudioAmplifier

Description TheU2510Bisanintegratedbipolarone-chipAM/FMradiocircuit.ItcontainsanFMfrontendwithpreamplifier,FMIFanddemodulator,acompleteAMreceiver,anAFamplifierandamodeswitchforAM,FMandtape.Thiscircuitisdesignedforclockradiosandportableradio-cassette

Temic

TEMIC Semiconductors

U2510B-MT

All-BandAM/FMReceiverandAudioAmplifier

Description TheU2510Bisanintegratedbipolarone-chipAM/FMradiocircuit.ItcontainsanFMfrontendwithpreamplifier,FMIFanddemodulator,acompleteAMreceiver,anAFamplifierandamodeswitchforAM,FMandtape.Thiscircuitisdesignedforclockradiosandportableradio-cassette

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

UF2510G

2.5AGLASSPASSIVATEDULTRAFASTDIODE

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

UPA2510

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2510,whichhasaheatspreader,isP-channel MOSFieldEffectTransistordesignedforpowermanagement applicationsofnotebookcomputers. FEATURES ?μPA2510hasathinsurfacemountpackagewithaheat spreader.Thelandsizeissameas8-pinTSSOP. ?Lowon-stateres

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號:

    TN2510

  • 功能描述:

    MOSFET 100V 1.5Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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SUPERTEXINC
23+
TO223/3
7000
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12+
SOT89
15000
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SUPERTEXINC
05+
原廠原裝
6411
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Supertex
24+
SOT-89
4897
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SUPERTEX
23+
SOT-89
10000
原裝正品,假一罰十
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SUPERTEX
23+
SOT89
12000
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更多TN2510供應(yīng)商 更新時間2025-1-7 17:10:00