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TN2510N8中文資料SUTEX數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

TN2510N8
廠商型號(hào)

TN2510N8

功能描述

N-Channel Enhancement-Mode Vertical DMOS FETs

文件大小

478.02 Kbytes

頁(yè)面數(shù)量

4 頁(yè)

生產(chǎn)廠商 Supertex, Inc
企業(yè)簡(jiǎn)稱

SUTEX

中文名稱

Supertex, Inc官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-4-12 17:52:00

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TN2510N8規(guī)格書(shū)詳情

Low Threshold DMOS Technology

These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Features

? Low threshold —2.0V max.

? High input impedance

? Low input capacitance — 125pF max.

? Fast switching speeds

? Low on resistance

? Free from secondary breakdown

? Low input and output leakage

? Complementary N- and P-channel devices

Applications

? Logic level interfaces – ideal for TTL and CMOS

? Solid state relays

? Battery operated systems

? Photo voltaic drives

? Analog switches

? General purpose line drivers

? Telecom switches

產(chǎn)品屬性

  • 型號(hào):

    TN2510N8

  • 功能描述:

    MOSFET 100V 1.5Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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