首頁(yè) >TK13A65D(Q)>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor ?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance:RDS(on)=0.4?(typ.) ?Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1.0mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor ?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance:RDS(ON)=0.32?(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=650V) ?Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobu | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
FieldEffectTransistorSiliconNChannelMOSType(DTMOS?? SwitchingRegulatorApplications ?Lowdrain-sourceONresistance:RDS(ON)=0.32?(typ.) ?Highforwardtransferadmittance:?Yfs?=8.0S(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=650V) ?Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.4?(typ.) (2)Highforwardtransferadmittance:|Yfs|=7.5S(typ.) (3)Lowleakagecurrent:IDSS=10μA(max)(VDS=650V) (4)Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA) Applications ?SwitchingVoltageRegulato | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
iscN-ChannelMOSFETTransistor ?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance:RDS(on)=0.4?(typ.) ?Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1.0mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
iscN-ChannelMOSFETTransistor ?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance:RDS(ON)=0.32?(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=650V) ?Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobu | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
FieldEffectTransistorSiliconNChannelMOSType(DTMOS?? SwitchingRegulatorApplications ?Lowdrain-sourceONresistance:RDS(ON)=0.32?(typ.) ?Highforwardtransferadmittance:?Yfs?=8.0S(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=650V) ?Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA |
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