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ITK13A65U

iscN-Channel MOSFET Transistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance:RDS(ON)=0.32?(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=650V) ?Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobu

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

ITK13A65D

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance:RDS(on)=0.4?(typ.) ?Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1.0mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

K13A65U

FieldEffectTransistorSiliconNChannelMOSType(DTMOS??

SwitchingRegulatorApplications ?Lowdrain-sourceONresistance:RDS(ON)=0.32?(typ.) ?Highforwardtransferadmittance:?Yfs?=8.0S(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=650V) ?Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TK13A65D

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

TK13A65D

SwitchingVoltageRegulators

Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.4?(typ.) (2)Highforwardtransferadmittance:|Yfs|=7.5S(typ.) (3)Lowleakagecurrent:IDSS=10μA(max)(VDS=650V) (4)Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA) Applications ?SwitchingVoltageRegulato

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TK13A65D

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance:RDS(on)=0.4?(typ.) ?Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1.0mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

TK13A65U

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

TK13A65U

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TK13A65U

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance:RDS(ON)=0.32?(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=650V) ?Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobu

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

TK13A65U

FieldEffectTransistorSiliconNChannelMOSType(DTMOS??

SwitchingRegulatorApplications ?Lowdrain-sourceONresistance:RDS(ON)=0.32?(typ.) ?Highforwardtransferadmittance:?Yfs?=8.0S(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=650V) ?Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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伊娜 RSHTK391M1GFK5002E HVK
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8000
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2407+
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7750
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5000
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更多ITK13A65U供應(yīng)商 更新時(shí)間2025-3-1 16:18:00

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