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T4312816A

8M x 16 SDRAM???

GRNERALDESCRIPTION TheT4312816Ais134,217,728bitssynchronoushighdatarateDynamicRAMorganizedas4x2,097,152wordsby16bits,fabricatedwithhighperformanceCMOStechnology. FEATURES ?3.3Vpowersupply ?Fourbanksoperation ?LVTTLcompatiblewithmultiplexedaddress ?Alli

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T4312816A-10S

8M x 16 SDRAM???

GRNERALDESCRIPTION TheT4312816Ais134,217,728bitssynchronoushighdatarateDynamicRAMorganizedas4x2,097,152wordsby16bits,fabricatedwithhighperformanceCMOStechnology. FEATURES ?3.3Vpowersupply ?Fourbanksoperation ?LVTTLcompatiblewithmultiplexedaddress ?Alli

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T4312816A-6S

8M x 16 SDRAM???

GRNERALDESCRIPTION TheT4312816Ais134,217,728bitssynchronoushighdatarateDynamicRAMorganizedas4x2,097,152wordsby16bits,fabricatedwithhighperformanceCMOStechnology. FEATURES ?3.3Vpowersupply ?Fourbanksoperation ?LVTTLcompatiblewithmultiplexedaddress ?Alli

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T4312816A-7.5S

8M x 16 SDRAM???

GRNERALDESCRIPTION TheT4312816Ais134,217,728bitssynchronoushighdatarateDynamicRAMorganizedas4x2,097,152wordsby16bits,fabricatedwithhighperformanceCMOStechnology. FEATURES ?3.3Vpowersupply ?Fourbanksoperation ?LVTTLcompatiblewithmultiplexedaddress ?Alli

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T4312816A-7S

8M x 16 SDRAM???

GRNERALDESCRIPTION TheT4312816Ais134,217,728bitssynchronoushighdatarateDynamicRAMorganizedas4x2,097,152wordsby16bits,fabricatedwithhighperformanceCMOStechnology. FEATURES ?3.3Vpowersupply ?Fourbanksoperation ?LVTTLcompatiblewithmultiplexedaddress ?Alli

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T4312816A-8S

8M x 16 SDRAM???

GRNERALDESCRIPTION TheT4312816Ais134,217,728bitssynchronoushighdatarateDynamicRAMorganizedas4x2,097,152wordsby16bits,fabricatedwithhighperformanceCMOStechnology. FEATURES ?3.3Vpowersupply ?Fourbanksoperation ?LVTTLcompatiblewithmultiplexedaddress ?Alli

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T4312816B

8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM

GRNERALDESCRIPTION TheT4312816BSDRAMisahigh-speedCMOSsynchronousDRAMcontaining128Mbits.Itisinternallyconfiguredas4Banksof2Mwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).ReadandwriteaccessestotheS

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T4312816B-6S

8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM

GRNERALDESCRIPTION TheT4312816BSDRAMisahigh-speedCMOSsynchronousDRAMcontaining128Mbits.Itisinternallyconfiguredas4Banksof2Mwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).ReadandwriteaccessestotheS

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T4312816B-6SG

8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM

GRNERALDESCRIPTION TheT4312816BSDRAMisahigh-speedCMOSsynchronousDRAMcontaining128Mbits.Itisinternallyconfiguredas4Banksof2Mwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).ReadandwriteaccessestotheS

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T4312816B-7S

8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM

GRNERALDESCRIPTION TheT4312816BSDRAMisahigh-speedCMOSsynchronousDRAMcontaining128Mbits.Itisinternallyconfiguredas4Banksof2Mwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).ReadandwriteaccessestotheS

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T4312816B-7SG

8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM

GRNERALDESCRIPTION TheT4312816BSDRAMisahigh-speedCMOSsynchronousDRAMcontaining128Mbits.Itisinternallyconfiguredas4Banksof2Mwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).ReadandwriteaccessestotheS

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T4314

TRIANGULAR TYPE

LEDLAMP(TRIANGULARTYPE)

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

T431616A

1M x 16 SDRAM????

GRNERALDESCRIPTION TheT431616Ais16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithhighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleone

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T431616A-7C

1M x 16 SDRAM????

GRNERALDESCRIPTION TheT431616Ais16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithhighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleone

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T431616A-7CI

1M x 16 SDRAM????

GRNERALDESCRIPTION TheT431616Ais16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithhighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleone

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T431616A-7S

1M x 16 SDRAM????

GRNERALDESCRIPTION TheT431616Ais16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithhighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleone

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T431616A-7SI

1M x 16 SDRAM????

GRNERALDESCRIPTION TheT431616Ais16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithhighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleone

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T431616B

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

GRNERALDESCRIPTION TheT431616Bis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithhighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleone

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T431616B-10C

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

GRNERALDESCRIPTION TheT431616Bis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithhighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleone

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T431616B-10S

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

GRNERALDESCRIPTION TheT431616Bis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithhighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleone

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

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50000
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23+
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3000
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DIODES
24+
TO-92
33500
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22+
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640
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24+
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40
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03/04+
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218
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68500
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