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T4312816A

8M x 16 SDRAM???

GRNERALDESCRIPTION TheT4312816Ais134,217,728bitssynchronoushighdatarateDynamicRAMorganizedas4x2,097,152wordsby16bits,fabricatedwithhighperformanceCMOStechnology. FEATURES ?3.3Vpowersupply ?Fourbanksoperation ?LVTTLcompatiblewithmultiplexedaddress ?Alli

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T4312816A-10S

8M x 16 SDRAM???

GRNERALDESCRIPTION TheT4312816Ais134,217,728bitssynchronoushighdatarateDynamicRAMorganizedas4x2,097,152wordsby16bits,fabricatedwithhighperformanceCMOStechnology. FEATURES ?3.3Vpowersupply ?Fourbanksoperation ?LVTTLcompatiblewithmultiplexedaddress ?Alli

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T4312816A-6S

8M x 16 SDRAM???

GRNERALDESCRIPTION TheT4312816Ais134,217,728bitssynchronoushighdatarateDynamicRAMorganizedas4x2,097,152wordsby16bits,fabricatedwithhighperformanceCMOStechnology. FEATURES ?3.3Vpowersupply ?Fourbanksoperation ?LVTTLcompatiblewithmultiplexedaddress ?Alli

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T4312816A-7.5S

8M x 16 SDRAM???

GRNERALDESCRIPTION TheT4312816Ais134,217,728bitssynchronoushighdatarateDynamicRAMorganizedas4x2,097,152wordsby16bits,fabricatedwithhighperformanceCMOStechnology. FEATURES ?3.3Vpowersupply ?Fourbanksoperation ?LVTTLcompatiblewithmultiplexedaddress ?Alli

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T4312816A-7S

8M x 16 SDRAM???

GRNERALDESCRIPTION TheT4312816Ais134,217,728bitssynchronoushighdatarateDynamicRAMorganizedas4x2,097,152wordsby16bits,fabricatedwithhighperformanceCMOStechnology. FEATURES ?3.3Vpowersupply ?Fourbanksoperation ?LVTTLcompatiblewithmultiplexedaddress ?Alli

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T4312816A-8S

8M x 16 SDRAM???

GRNERALDESCRIPTION TheT4312816Ais134,217,728bitssynchronoushighdatarateDynamicRAMorganizedas4x2,097,152wordsby16bits,fabricatedwithhighperformanceCMOStechnology. FEATURES ?3.3Vpowersupply ?Fourbanksoperation ?LVTTLcompatiblewithmultiplexedaddress ?Alli

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T4312816B

8Mx16SDRAM2Mx16bitx4BanksSynchronousDRAM

GRNERALDESCRIPTION TheT4312816BSDRAMisahigh-speedCMOSsynchronousDRAMcontaining128Mbits.Itisinternallyconfiguredas4Banksof2Mwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).ReadandwriteaccessestotheS

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

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更多T4312816A供應(yīng)商 更新時(shí)間2025-1-12 16:42:00

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